Array Substrate Assembly Crystallization Control
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Solution Overview
Problem
In the manufacturing of thin film transistor (TFT) array substrate assemblies, local crystallization of transparent oxide semiconductors occurs due to high temperatures, leading to issues with etching and resulting in bright spots in display panels, as crystalline oxide semiconductors are not easily removable by conventional etching solutions.
Innovation Solution
A semiconductor removing layer corrodible by a corrosive solution is formed on the substrate, allowing for patterning and etching of the semiconductor layer without damaging equipment, reducing energy consumption, and eliminating residue through corrosion by etching or stripping solutions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high temperature processing is used to form transparent oxide semiconductor layer, then the semiconductor layer can be formed, but local crystallization occurs leading to etching difficulties and bright spots in display panels
Solution Approach 1:
A semiconductor removing layer is introduced as an intermediary between the substrate and the semiconductor layer. This removing layer serves as a mediator that can be selectively removed by corrosive solution to eliminate crystallized semiconductor residues without requiring high-power equipment or excessive energy, thus resolving the contradiction between forming the semiconductor layer and preventing crystallization damage.
2Ease of manufacture
If conventional etching solutions are used to remove semiconductor residues, then the process is simple, but crystalline oxide semiconductor residues remain causing bright spots
Solution Approach 1:
The semiconductor removing layer is extracted as a separate functional layer that can be selectively removed by corrosive solution. This extraction allows the corrosive solution to access and remove crystallized semiconductor residues at the interface between the removing layer and substrate, achieving complete residue removal while maintaining process simplicity.
3Manufacturing precision
If high power equipment is used to remove crystallized semiconductor, then residues can be removed, but equipment damage and energy consumption increase
Solution Approach 1:
The semiconductor removing layer acts as a sacrificial intermediary that enables gentle chemical removal of crystallized semiconductor residues using corrosive solution. This approach replaces high-power physical removal methods with low-energy chemical etching, significantly reducing energy consumption and preventing equipment damage while achieving complete residue removal.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively removes crystalline semiconductor residues while minimizing equipment damage and cost, ensuring improved performance parameters like transmittance and resistance in display devices by preventing crystallization and residue formation.
Implementation Method 1
forming a semiconductor removing layer corrodible by a corrosive solution... while the semiconductor removing layer is corroded to be removed by the corrosive solution
Data Source
AI summary
A method of manufacturing an array substrate assembly, an array substrate assembly manufactured by the method, and a display panel including the array substrate assembly are disclosed. The method includes: providing a substrate, the substrate having a first region as a preset semiconductor-removed region, and a second region as a remaining region; forming, in the first region of the substrate, a semiconductor removing layer corrodible by a corrosive solution; and forming a semiconductor layer on the substrate formed with the semiconductor removing layer, so that the semiconductor layer covers the semiconductor removing layer.