Electrostatic Shielding Layer in Array Substrate for ESD Protection

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Solution Overview

Problem

During the manufacturing of array substrates, static electricity accumulated on platforms can cause electrostatic discharge (ESD), leading to defects such as bright spots and black spots in display products due to the thin thickness of the base substrate, which fails to shield static electricity effectively.

Innovation Solution

An electrostatic shielding layer made of ion-doped polysilicon with a predetermined resistance is formed on the base substrate, covering the gate lines, data lines, and thin film transistors, and an isolating layer is used to isolate the shielding layer from these components, creating a grid-like pattern to effectively shield static electricity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Illumination intensity

If the base substrate is made thin to reduce weight and improve display quality, then the display product quality is improved, but the substrate fails to shield static electricity effectively, leading to ESD defects

Engineering Contradiction:
Improvedisplay product qualityVSAvoidstatic electricity shielding
Core Design Contradiction:
Illumination intensityVSObject-affected harmful factors

Solution Approach 1:

An electrostatic shielding layer is introduced as an intermediary component between the base substrate and the thin film transistors. This shielding layer, made of ion-doped polysilicon with controlled resistance, mediates the static electricity problem by providing a discharge path without requiring the base substrate to be thicker, thus maintaining display quality while preventing ESD defects.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The electrostatic shielding function is segmented from the base substrate structure and implemented as a separate functional layer. This allows the base substrate to remain thin for display quality while the dedicated shielding layer handles the static electricity protection, resolving the contradiction between substrate thickness and shielding effectiveness.

Inventive Principle:
Principle #1Segmentation

2Object-affected harmful factors

If an electrostatic shielding layer is added to prevent ESD defects, then static electricity shielding is improved, but the device structure becomes more complex

Engineering Contradiction:
Improvestatic electricity shieldingVSAvoidstructure complexity
Core Design Contradiction:
Object-affected harmful factorsVSDevice complexity

Solution Approach 1:

The electrostatic shielding layer is designed to serve multiple functions: it provides static electricity shielding, acts as a gate line structure, and can function as an electrode. By making the shielding layer multi-functional, the patent avoids adding excessive structural complexity while achieving effective ESD protection.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The electrostatic shielding function is merged with existing structural elements such as gate lines and electrodes. Instead of creating a completely separate shielding structure, the patent combines the shielding function with components that already exist in the display device, thereby reducing overall structural complexity.

Inventive Principle:
Principle #5Merging (Combining)

3Object-affected harmful factors

If the electrostatic shielding layer has low resistance to effectively discharge static electricity, then static electricity shielding is improved, but parasitic capacitance and energy consumption increase

Engineering Contradiction:
Improvestatic electricity dischargeVSAvoidenergy consumption
Core Design Contradiction:
Object-affected harmful factorsVSLoss of energy

Solution Approach 1:

The resistance parameter of the electrostatic shielding layer is precisely controlled through ion doping to achieve an optimal balance. By adjusting the doping concentration and resistance value, the patent enables effective static electricity discharge while minimizing parasitic capacitance and energy consumption, resolving the contradiction between shielding effectiveness and energy loss.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The electrostatic shielding layer prevents static electricity from being transmitted to the thin film transistors, thereby reducing defects in display products and improving yield by effectively shielding static electricity, while maintaining optimal resistance to avoid parasitic capacitance and energy consumption.

Implementation Method 1

an electrostatic shielding layer disposed on a base substrate... The electrostatic shielding layer prevents static electricity from being transmitted to the thin film transistors

Methodology Applied
Scientific EffectElectrostatic shielding: Electrostatics

Implementation Method 2

An electrostatic shielding layer made of ion-doped polysilicon with a predetermined resistance... maintaining optimal resistance to avoid parasitic capacitance and energy consumption

Methodology Applied
Scientific EffectElectrical resistance: Electrical Resistance

Data Source

PatentUS10978495B2Array substrate and method of manufacturing the same, and display device
Publication Date: 2021.04.13 ORDOS YUANSHENG OPTOELECTRONICS
  • US10978495B2 patent drawing
  • US10978495B2 patent drawing
  • US10978495B2 patent drawing

AI summary

An array substrate includes an electrostatic shielding layer disposed on a substrate, an isolating layer covering the electrostatic shielding layer, gate lines, data lines, and thin film transistors. The gate lines, the data lines, and the thin film transistors are disposed on the isolating layer. An orthographic projection of a pattern of the electrostatic shielding layer on the substrate covers an orthographic projection of at least one of a pattern of the gate lines, a pattern of the data lines, and a pattern of the thin film transistors on the substrate.