Array Substrate Floating Gate Pixel Electrode Single Mask Process
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Solution Overview
Problem
The manufacturing process of dual gate metal oxide semiconductor thin film transistors requires an additional mask to form a floating gate electrode, increasing production costs and complexity.
Innovation Solution
An array substrate with a thin film transistor featuring a floating gate electrode formed on top, where at least a portion of the floating gate electrode and the pixel electrode are made of the same metal oxide semiconductor material, eliminating the need for a separate mask by being formed simultaneously with the pixel electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a separate mask is used to form the floating gate electrode, then the device stability and mobility are improved, but the manufacturing complexity and production cost increase
Solution Approach 1:
The patent merges the formation of the floating gate electrode and pixel electrode into a single patterning step using one mask. The material layer is patterned simultaneously to form both electrodes, eliminating the need for a separate mask process that would otherwise be required to create the floating gate electrode structure.
Solution Approach 2:
The single mask serves multiple functions by defining both the floating gate electrode and pixel electrode patterns in one exposure and development step. This multi-functional approach replaces the traditional sequential masking process, reducing manufacturing complexity while maintaining device performance.
2Reliability
If a separate mask is used to form the floating gate electrode, then the device mobility is improved, but the production cost increases
Solution Approach 1:
The patent combines the floating gate electrode and pixel electrode formation into a single material deposition and patterning operation. This merging of processes reduces the total number of manufacturing steps, directly lowering production costs while preserving the floating gate structure necessary for device mobility.
Solution Approach 2:
The material layer is deposited and patterned in advance to simultaneously create both the floating gate electrode and pixel electrode. This preliminary action eliminates the need for subsequent separate masking and deposition steps, reducing both time and cost.
3Shape
If a separate mask is used to form the floating gate electrode, then the floating gate structure is achieved, but the number of manufacturing steps increases
Solution Approach 1:
The patent merges multiple electrode formation steps into a single patterning operation. By using one mask to define both the floating gate electrode and pixel electrode, the manufacturing process is streamlined, increasing productivity without compromising the floating gate structure.
Solution Approach 2:
The patent extracts the floating gate electrode formation from the sequential masking process and integrates it into the pixel electrode formation step. This extraction and integration eliminates redundant manufacturing steps while maintaining the necessary floating gate structure.
Data Source
AI summary
The present disclosure discloses an array substrate, the array substrate comprises a substrate as well as a thin film transistor and a pixel electrode formed on the substrate, wherein the top of the thin film transistor is formed a floating gate electrode, at least portion of the floating gate electrode and the pixel electrode are made of the same material. The present disclosure also discloses a manufacturing method of an array substrate. Through this way, the present disclosure simultaneously forms a floating gate electrode in the manufacturing process of the pixel electrode, the pixel electrode and the floating gate electrode is formed by a mask, there is no need to add a mask, thus achieving the manufacture of the dual gate thin film transistor and the array substrate, briefing the process, reducing the production costs.