Array Substrate Gate Electrode Wrapping for Aperture Ratio

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Solution Overview

Problem

High-resolution liquid crystal display devices face a decrease in aperture ratio due to the increasing size of light-blocking regions for thin film transistors, leading to degraded image quality.

Innovation Solution

The design of an array substrate with a specific configuration of electrodes and insulation layers, including a semiconductor pattern layer with a channel that electrically connects the source and drain electrodes, and a gate electrode arrangement that overlaps with the source, semiconductor, and drain electrodes, reduces the horizontal area occupied by thin film transistors, thereby increasing the aperture ratio.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If the number of pixels in a display region is increased to achieve high resolution, then the resolution is improved, but the aperture ratio decreases due to larger light-blocking regions for thin film transistors

Engineering Contradiction:
ImproveresolutionVSAvoidaperture ratio
Core Design Contradiction:
Measurement precisionVSArea of stationary object

Solution Approach 1:

The gate electrode is extended from a planar configuration to a three-dimensional structure that wraps around the semiconductor pattern layer, utilizing vertical and lateral dimensions simultaneously. This spatial reconfiguration reduces the horizontal footprint of the thin film transistor while maintaining electrical functionality, thereby increasing the aperture ratio without compromising resolution

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The gate electrode is positioned to overlap with the source electrode, semiconductor pattern layer, and drain electrode in a nested arrangement. This nesting allows the gate electrode to control the channel while occupying minimal additional horizontal space, effectively reducing the light-blocking region area and improving aperture ratio

Inventive Principle:
Principle #7Nested doll (Nesting)

2Area of stationary object

If the area occupied by thin film transistors in each pixel is reduced to increase aperture ratio, then the aperture ratio is improved, but the electrical characteristics of the thin film transistor may become unstable

Engineering Contradiction:
Improveaperture ratioVSAvoidelectrical characteristics stability
Core Design Contradiction:
Area of stationary objectVSReliability

Solution Approach 1:

By extending the gate electrode vertically and laterally to wrap around the semiconductor pattern layer, the effective gate control area is increased without increasing the horizontal footprint. This three-dimensional configuration provides sufficient electrical control for stable transistor characteristics while maintaining a compact layout that preserves aperture ratio

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The gate electrode is configured to overlap with multiple components (source electrode, semiconductor pattern layer, and drain electrode) simultaneously, merging multiple functional regions into a compact structure. This overlapping arrangement ensures stable electrical characteristics through adequate gate control while minimizing the overall area occupied by the thin film transistor

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS10782580B2Array substrate, liquid crystal display device having the same, and method for manufacturing array substrate
Publication Date: 2020.09.22 SAMSUNG DISPLAY CO LTD
  • US10782580B2 patent drawing
  • US10782580B2 patent drawing
  • US10782580B2 patent drawing

AI summary

An array substrate includes a first substrate, a source electrode disposed on the first substrate, a semiconductor pattern layer disposed on the source electrode, a drain electrode disposed on the semiconductor pattern layer, a pixel electrode disposed on the drain electrode and a gate electrode disposed on at least one side surface of the semiconductor pattern layer. A method of making the solar panel is provided. A method of making the array substrate is provided.