Array Substrate Etching with Hydrogen Peroxide Electrolyte
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Solution Overview
Problem
The fast corrosion rate of copper in etching solutions widens the channel of thin film transistors, failing to meet the requirements for narrow channels in display panel manufacturing.
Innovation Solution
A method for manufacturing an array substrate involves forming a second metal structure layer with a hydrogen peroxide-based electrolyte solution, using a combination of molybdenum, titanium, and nickel as the second metal thin film layer, which acts as an anode in a primary cell to reduce copper corrosion, ensuring the formation of narrow channels in thin film transistors.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a metal film layer is patterned by an etching process using copper as the main material, then the corrosion rate of copper is fast, but the channel of the thin film transistor is widened, failing to meet the requirements for narrow channels
Solution Approach 1:
The patent introduces an intermediary substance (organic acid or hydrogen peroxide solution) to mediate the etching process. This intermediary selectively removes the aluminum alloy layer while protecting the copper layer, enabling precise channel formation without excessive copper corrosion. The intermediary acts as a controlled agent that differentiates between the two metal layers during etching.
Solution Approach 2:
The patent changes the chemical parameters of the etching solution by using organic acids (formic acid, acetic acid, propionic acid) or hydrogen peroxide instead of traditional inorganic acids. This parameter change fundamentally alters the etching mechanism to be selective toward aluminum alloy while being gentle on copper, thereby achieving both narrow channel precision and controlled etching speed.
2Productivity
If the channel of the thin film transistor is widened due to fast copper corrosion, then the etching process is efficient, but the resolution requirements of display panels cannot be met
Solution Approach 1:
The organic acid or hydrogen peroxide solution serves as a selective intermediary that enables efficient removal of the aluminum alloy layer while acting as a protective mediator for the copper layer. This dual-action intermediary maintains high etching efficiency for the target layer while preventing excessive corrosion of the copper, thereby achieving both productivity and precision.
Solution Approach 2:
The patent extracts and removes only the aluminum alloy layer from the metal film structure through selective etching, leaving the copper layer intact. This extraction approach allows the etching process to be efficient in removing the intended material while inherently protecting the copper, thus maintaining both etching efficiency and channel width control.
3Reliability
If copper is used as the main material in metal wiring, then the capacitance-resistance time delay effect is reduced, but the corrosion rate in etching solution increases
Solution Approach 1:
The organic acid or hydrogen peroxide solution acts as a protective intermediary during the etching process. It selectively interacts with the aluminum alloy layer while being inert or minimally reactive toward copper, thereby enabling the use of copper for its excellent electrical properties without suffering from excessive corrosion during manufacturing.
Solution Approach 2:
The patent converts the potential harm of copper's reactivity in traditional etching solutions into a benefit by using selective etchants that exploit the differences in chemical properties between aluminum alloy and copper. The etching process, which could potentially harm copper, is transformed into a beneficial selective removal process that preserves copper integrity while removing the aluminum alloy.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method effectively reduces the corrosion rate of copper, allowing for the precise formation of narrow channels in thin film transistors, meeting the application requirements for high-resolution display panels.
Implementation Method 1
the first metal thin film layer, the second metal thin film layer, and the electrolyte solution form a primary cell, the second metal thin film layer is an anode
Implementation Method 2
etching the second metal structure layer with an electrolyte solution to form a patterned second metal structure layer
Implementation Method 3
the electrolyte solution is a hydrogen peroxide-based etching solution
Implementation Method 4
sequentially forming a third metal thin film layer, the first metal thin film layer, and the second metal thin film layer on the semiconductor layer, by using a sputtering process
Data Source
AI summary
A method for manufacturing an array substrate and a array substrate are provided. The method includes steps of sequentially forming a first metal structure layer, an insulating layer, a semiconductor layer, and a second metal structure layer on the substrate. The first metal thin film layer and the second metal thin film layer are etched with an electrolyte solution to form a patterned second metal structure layer. The patterned second metal structure layer includes a source and a drain.