Array Substrate With Microcrystalline Silicon Infrared Detection
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Solution Overview
Problem
Current display panel manufacturing processes are incompatible with the growth of infrared detection elements due to high temperatures required for monocrystalline silicon and the molecular beam epitaxy process used for indium gallium arsenide, limiting the development of array substrates compatible with these elements.
Innovation Solution
An array substrate is developed with a thin film transistor layer and an infrared detection element, where the light-absorbing layer is made of microcrystalline silicon, which can be integrated into the display panel production line using a plasma-enhanced chemical vapor deposition process, allowing for electrical connection to the thin film transistor and meeting the requirements for infrared detection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If monocrystalline silicon is used for the light-absorbing layer, then infrared detection accuracy is improved, but manufacturing temperature requirement exceeds display panel process limits
Solution Approach 1:
The patent changes the material parameter from monocrystalline silicon to microcrystalline silicon, which fundamentally alters the growth temperature requirement from 900°C to below 600°C, enabling compatibility with display panel manufacturing processes while maintaining infrared detection functionality
Solution Approach 2:
The patent uses microcrystalline silicon as a composite material that combines the infrared detection capabilities of crystalline silicon with the low-temperature processing advantages of amorphous silicon, achieving both detection accuracy and process compatibility
2Measurement precision
If indium gallium arsenide is used for the light-absorbing layer, then infrared detection accuracy is improved, but the molecular beam epitaxy process is not compatible with display panel production lines
Solution Approach 1:
The patent changes the deposition method parameter from molecular beam epitaxy to plasma-enhanced chemical vapor deposition, which is compatible with existing display panel production lines while maintaining the ability to produce high-quality light-absorbing layers for infrared detection
Solution Approach 2:
The patent adopts the plasma-enhanced chemical vapor deposition process already established in display panel manufacturing, copying the existing process infrastructure to produce infrared detection elements without requiring new equipment or process lines
3Measurement precision
If the light-absorbing layer thickness is increased, then infrared light absorption is improved, but the band gap deviates from optimal detection range
Solution Approach 1:
The patent optimizes the thickness parameter of the microcrystalline silicon light-absorbing layer to a specific range (300-3000 nm) that simultaneously achieves sufficient infrared light absorption and maintains the band gap within the optimal detection range of 1.1-1.5 eV
Solution Approach 2:
The patent applies a thickness range rather than a single value, allowing partial optimization where the lower end (300 nm) ensures sufficient absorption while the upper end (3000 nm) maintains band gap control, providing flexibility for different application requirements
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution improves the accuracy of infrared detection, simplifies the manufacturing process, reduces panel thickness, and enables large-scale industrial production of display panels with integrated infrared detection elements, while being compatible with existing production lines.
Implementation Method 1
a material of the light-absorbing layer is microcrystalline silicon... the microcrystalline silicon is formed by a plasma-enhanced chemical vapor deposition process
Data Source
AI summary
An array substrate and a manufacturing method thereof are provided. The array substrate includes a thin film transistor layer including a first thin film transistor and an infrared detection element disposed on a first side of the thin film transistor layer. The infrared detection element includes a first electrode, a light-absorbing layer, and a second electrode sequentially stacked, wherein the infrared detection element is electrically connected to the first thin film transistor, and wherein a material of the light-absorbing layer is microcrystalline silicon. A thickness and band gap of the microcrystalline silicon simultaneously fulfill a purpose of infrared detection.