Array Substrate Light Shielding for GOA Transistor Reliability
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Solution Overview
Problem
In Gate Driver On Array (GOA) technology, thin film transistors in the gate drive circuit are subjected to long-term positive stress, leading to easy deterioration and fast degradation, which affects the reliability of the shift register units and overall display performance.
Innovation Solution
An array substrate is designed with a base substrate and a first light shielding layer on one surface and a gate drive circuit on the other, featuring openings that allow light to irradiate the active layers of the thin film transistors, applying a negative stress to counteract the positive stress and reduce deterioration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If thin film transistors are used in gate drive circuit without light shielding, then manufacturing is simpler, but the transistors deteriorate faster due to light exposure
Solution Approach 1:
The light shielding layer is segmented with specific opening regions that correspond to transistor positions, allowing light to reach only selected transistors that require it for compensation, while other regions remain shielded. This segmented approach selectively applies light exposure to improve reliability without unnecessarily complicating the entire structure.
Solution Approach 2:
Different regions of the substrate receive different light exposure treatments through the opening regions in the light shielding layer. Transistors in opening regions receive light for compensation effect, while transistors in shielded regions are protected from light-induced deterioration. This local differentiation optimizes reliability for specific transistors without uniformly complicating the entire device structure.
2Reliability
If a complete light shielding layer is added to protect transistors, then transistor deterioration is reduced, but light cannot reach areas needing illumination for proper operation
Solution Approach 1:
The light shielding layer is divided into shielded regions and opening regions, creating a patterned structure that simultaneously provides protection and allows light transmission. The opening regions are strategically positioned to match transistor locations requiring light exposure, ensuring adequate illumination intensity reaches the active layers while other areas remain protected.
Solution Approach 2:
The light shielding layer acts as an intermediary element that mediates between the need for light protection and the need for light exposure. By incorporating opening regions, it selectively transmits light to specific areas while blocking it from others, resolving the contradiction between protection and illumination requirements.
3Reliability
If openings are added to light shielding layer to illuminate transistors, then transistor deterioration is compensated, but manufacturing precision requirements increase
Solution Approach 1:
The opening regions are pre-designed and pre-positioned in the light shielding layer during the manufacturing process, aligned with the transistor positions before final assembly. This preliminary positioning ensures that the openings correspond to the correct transistor locations, reducing the need for high-precision post-manufacturing alignment and lowering overall manufacturing precision requirements.
Solution Approach 2:
The opening regions are designed to self-align with transistor positions through the manufacturing process itself, where the light shielding layer is formed in conjunction with the transistor array. The manufacturing process inherently provides the alignment, making the system self-aligning and reducing external precision requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability of the thin film transistors and the gate drive circuit by reducing deterioration, enhancing the display performance and longevity of the devices.
Implementation Method 1
a first light shielding layer provided on the second surface of the base substrate. The first light shielding layer has at least one opening that overlaps with at least one thin film transistor
Implementation Method 2
allow light to irradiate the active layer of at least one thin film transistor... applying a negative stress to counteract the positive stress and reduce deterioration
Data Source
AI summary
An array substrate, a manufacturing method thereof and a display panel are provided. The array substrate includes a base substrate, a plurality of thin film transistors and a first light shielding layer. The base substrate includes a first surface and a second surface respectively located on opposite sides of the base substrate. The plurality of thin film transistors are disposed on the first surface of the base substrate, and each of the plurality of thin film transistors includes an active layer. The first light shielding layer is disposed on the second surface of the base substrate. The first light shielding layer has at least one opening that overlaps with at least one thin film transistor in a direction perpendicular to the second surface of the base substrate to allow light to irradiate at least the active layer of at least one thin film transistor.