Array Substrate Shielding Layout for Mask Splice Etch Protection
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Solution Overview
Problem
In display device manufacturing, the splicing of halftone masks for exposure development can lead to etching breaks in signal lines, resulting in decreased yield due to photoresist removal at mask splicing areas.
Innovation Solution
An array substrate with a shielding pattern layer that overlaps a virtual median line, patterned together with the channel layers of active elements, is used to protect signal lines from etching breaks during the mask splicing process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If halftone masks are spliced together for exposure development to reduce the number of masks, then the manufacturing process is simplified, but the photoresist at the mask splicing area is removed after repeated exposures, resulting in etching breaks in signal lines
Solution Approach 1:
The shielding pattern layer is formed in advance at the mask splicing area before the actual signal line patterning. This preliminary structure prevents photoresist removal and etching breaks by providing a protective barrier during repeated exposures, allowing the halftone mask splicing process to proceed without damaging the signal lines.
Solution Approach 2:
The shielding pattern layer acts as an intermediary element between the mask splicing process and the signal lines. It mediates the harmful effect of repeated exposures at the splicing area by absorbing or blocking the excessive exposure energy, thereby protecting the underlying signal lines from etching breaks while allowing the mask splicing to function.
2Device complexity
If halftone masks are spliced together for exposure development, then the number of masks is reduced, but the photoresist located at the mask splicing area is removed after repeated exposures, leading to a decrease in yield
Solution Approach 1:
The shielding pattern layer is formed in advance at the mask splicing area before the actual signal line patterning. This preliminary structure prevents photoresist removal and etching breaks by providing a protective barrier during repeated exposures, allowing the halftone mask splicing process to proceed without damaging the signal lines.
Solution Approach 2:
The shielding pattern layer acts as an intermediary element between the mask splicing process and the signal lines. It mediates the harmful effect of repeated exposures at the splicing area by absorbing or blocking the excessive exposure energy, thereby protecting the underlying signal lines from etching breaks while allowing the mask splicing to function.
Data Source
AI summary
An array substrate has a geometric center and a virtual median line passing through the geometric center, and includes a substrate, a first metal layer, a second metal layer, active elements and a shielding pattern layer. The first metal layer is disposed on the substrate and includes first signal lines. The second metal layer is disposed on the first metal layer and includes second signal lines. The active elements are disposed on the substrate. Each active element is electrically connected to one of the first signal lines and one of the second signal lines and includes a channel layer. The shielding pattern layer is disposed between the first metal layer and the second metal layer, overlaps the virtual median line on the normal line of the substrate, and is formed by patterning the same layer as the channel layers.