Array Substrate Fabrication via Metal Semiconductor Compound Formation
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Solution Overview
Problem
Existing methods for fabricating thin film transistors face challenges due to corrosion of metal electrode surfaces caused by oxidation, particularly with low-resistance metals like Cu and Ti, which restricts their usage in display device fabrication processes.
Innovation Solution
A method involving the formation of a non-crystalline semiconductor thin film layer on a metal thin film layer, followed by annealing to convert it into a metal semiconductor compound, which prevents oxidative corrosion of the metal surface, allowing for the fabrication of metal oxide thin film transistors like IGZO, ITZO, and ZnON, and mitigates oxidation issues with Cu and Ti during the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If low-resistance metals (Cu, Ti) are used for electrodes and electrode leads, then electrical conductivity is improved, but the metal surfaces suffer from oxidative corrosion during fabrication procedures
Solution Approach 1:
A non-crystalline semiconductor thin film layer is introduced as an intermediary between the metal thin film layer and the external environment. This intermediate layer acts as a protective barrier that prevents direct contact between oxygen and the metal surface, thereby eliminating oxidative corrosion while preserving the electrical conductivity of the low-resistance metal electrodes and leads.
Solution Approach 2:
The invention creates a composite structure consisting of a metal thin film layer combined with a non-crystalline semiconductor thin film layer. This composite material system leverages the high electrical conductivity of metals and the oxidation resistance of semiconductors, achieving both improved conductivity and protection against oxidative corrosion simultaneously.
2Object-affected harmful factors
If existing heat treatment or plasma treatment processes are used to prevent oxidation, then oxidative corrosion is reduced, but the process complexity and fabrication difficulty increase
Solution Approach 1:
The protective non-crystalline semiconductor thin film layer is formed in advance during the fabrication process, before the metal electrodes are exposed to oxidizing environments. This preliminary protective action eliminates the need for subsequent complex heat treatment or plasma treatment processes, simplifying the overall fabrication workflow while effectively preventing oxidative corrosion.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively prevents oxidative corrosion of metal thin film layers, enabling the reliable fabrication of thin film transistors and display devices by converting non-crystalline semiconductor layers into metal semiconductor compounds that provide strong binding and resistance to oxidation, thus overcoming the limitations of existing heat and plasma treatment processes.
Implementation Method 1
performing annealing, so as to at least partly convert the non-crystalline semiconductor thin film layer into a metal semiconductor compound
Implementation Method 2
the resulting metal semiconductor compound may prevent oxidative-corrosion of the surface of the metal thin film layer
Data Source
AI summary
The invention relates to a method for fabricating an array substrate, an array substrate and a display device. The method for fabricating an array substrate may comprise: forming a metal thin film layer for a source electrode, a drain electrode and a data line; forming a non-crystalline semiconductor thin film layer on the metal thin film layer; and performing annealing, so as to at least partly convert the non-crystalline semiconductor thin film layer into a metal semiconductor compound. By at least partly converting the non-crystalline semiconductor thin film layer into a metal semiconductor compound, the resulting metal semiconductor compound may prevent oxidative-corrosion of the metal thin film layer, such as a low-resistance metal (e.g., Cu or Ti) layer, in the subsequent procedures, which is favorable for the fabrication of a metal oxide thin film transistor using Cu or Ti.