Array Substrate with Segmented Oxide Layers for Corrosion Resistance
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Solution Overview
Problem
Indium gallium zinc oxide semiconductors used in thin film transistors for liquid crystal display panels are sensitive to acidic etchants, leading to corrosion and poor device performance during wet etching processes.
Innovation Solution
An array substrate is designed with a back channel etch type structure, featuring an active layer made of indium gallium zinc tin oxide and an ohmic contact layer made of conductive indium gallium zinc oxide, which reduces the risk of corrosion and enhances electrical conductivity, thereby improving device performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If indium gallium zinc oxide semiconductor is used in thin film transistor, then high mobility and reduced power consumption are achieved, but the semiconductor is sensitive to acidic etchant and easily corroded during wet etching
Solution Approach 1:
The semiconductor layer is segmented into two distinct layers: an active layer made of indium gallium zinc tin oxide and an ohmic contact layer made of conductive indium gallium zinc oxide. This segmentation allows each layer to have optimized properties - the active layer provides high mobility while the ohmic contact layer provides corrosion resistance and conductivity, resolving the contradiction between performance and corrosion sensitivity.
Solution Approach 2:
The patent uses composite material structure with two different indium gallium zinc-based oxide materials. The active layer uses indium gallium zinc tin oxide while the ohmic contact layer uses conductive indium gallium zinc oxide. This composite approach combines the high mobility characteristics of one material with the corrosion resistance and conductivity of another, solving the technical contradiction.
2Reliability
If the ohmic contact layer is made of conductive indium gallium zinc oxide material, then contact resistance is reduced and electrical conductivity is enhanced, but the structural complexity increases
Solution Approach 1:
The patent changes the material parameters by using conductive indium gallium zinc oxide for the ohmic contact layer, which has different electrical properties compared to the active layer. This parameter change in material composition and conductivity achieves low contact resistance while maintaining a relatively simple two-layer structure that is compatible with existing manufacturing processes.
Data Source
AI summary
The present disclosure discloses an array substrate comprising: a substrate; a gate electrode; a gate insulating layer formed on one side of the substrate facing the gate electrode, the gate insulating layer covering the gate electrode; an active layer formed on one side of the gate insulating layer away from the gate electrode and made of an indium gallium zinc tin oxide material; an ohmic contact layer formed on one side of the active layer away from the gate insulating layer and made of a conductive indium gallium zinc oxide material, the ohmic contact layer covering both ends of the active layer; and a source electrode and a drain electrode formed on one side of the ohmic contact layer away from the active layer, the source electrode and the drain electrode being electrically connected to both ends of the active layer by the ohmic contact layer, respectively.