Array Substrate Oxide Semiconductor Layer Protection
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Solution Overview
Problem
The existing array substrates for display devices face issues due to thickness differences in the active layer of thin film transistors (TFTs), leading to degradation and reduced productivity, as well as surface exposure to etching gases during the fabrication process.
Innovation Solution
The implementation of an array substrate with an oxide semiconductor layer and an auxiliary pattern made of conducting material, where the auxiliary pattern is oxidized to form an insulating layer over the channel region, preventing surface exposure and ensuring uniform thickness of the oxide semiconductor layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional semiconductor layer fabrication method is used, then the fabrication process can be completed, but the active layer exhibits thickness differences causing TFT characteristic degradation
Solution Approach 1:
An auxiliary pattern is formed on the substrate before forming the oxide semiconductor layer. This auxiliary pattern serves as a preliminary structural element that prevents etching gas from reaching and damaging the oxide semiconductor layer surface during subsequent fabrication processes, ensuring uniform thickness and protecting TFT characteristics from degradation.
Solution Approach 2:
The auxiliary pattern acts as an intermediary protective layer between the etching gas and the oxide semiconductor layer. It physically blocks the harmful etching gas from directly contacting the semiconductor layer surface, thereby preventing surface damage while allowing the fabrication process to continue.
2Productivity
If the fabrication process continues without protection, then productivity is maintained, but the oxide semiconductor layer surface is exposed to etching gases causing damage and contamination
Solution Approach 1:
The auxiliary pattern serves as a protective intermediary that blocks etching gas from damaging the oxide semiconductor layer surface, allowing the fabrication process to proceed without interruption or additional protective steps that would reduce productivity.
Solution Approach 2:
The auxiliary pattern is formed in advance before the oxide semiconductor layer deposition, providing pre-established protection against etching gas exposure throughout the subsequent fabrication process without requiring additional protective measures.
3Device complexity
If the auxiliary pattern is not oxidized, then the fabrication process is simpler, but the surface protection function is lost
Solution Approach 1:
The auxiliary pattern undergoes oxidation, changing its material properties from a conductive material to an oxide form. This parameter change provides protective properties that prevent etching gas from damaging the oxide semiconductor layer surface, while the oxidation process integrates smoothly into the existing fabrication sequence.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enhances the characteristics of the TFTs by preventing surface damage and contamination, improving their performance and reducing material costs and fabrication time, while maintaining the oxide semiconductor layer's uniform thickness.
Implementation Method 1
an auxiliary pattern on the oxide semiconductor layer... the auxiliary pattern oxidized to form an insulating layer
Data Source
AI summary
An array substrate including a substrate having a pixel region, a gate line and a gate electrode on the substrate, the gate electrode being connected to the gate line, a gate insulating layer on the gate line and the gate electrode, an oxide semiconductor layer on the gate insulating layer, an auxiliary pattern on the oxide semiconductor layer, and source and drain electrodes on the auxiliary pattern, the source and drain electrodes being disposed over the auxiliary pattern and spaced apart from each other to expose a portion of the auxiliary pattern, the exposed portion of the auxiliary pattern exposing a channel region and including a metal oxide over the channel region, wherein a data line crosses the gate line to define the pixel region and is connected to the source electrode, a passivation layer on the source and drain electrodes and the data line.