Array Substrate Recessed Sections for Poly-Si Grain Control
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Solution Overview
Problem
Current excimer laser annealing processes cannot form poly-Si with different grain sizes for switching and driving TFTs on the same array substrate, failing to meet the distinct on-state current requirements of these devices.
Innovation Solution
The array substrate features recessed sections with inclined surfaces of different angles, allowing varying laser energy levels to be applied to a-Si films, resulting in poly-Si films with distinct grain sizes for switching and driving TFTs, enabling controlled crystallization and on-state current adjustment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If a uniform excimer laser annealing process is applied to all TFTs on the array substrate, then the manufacturing process is simple and efficient, but the poly-Si grain sizes cannot be differentiated, making it impossible to meet the different on-state current requirements of switching TFTs and driving TFTs
Solution Approach 1:
The patent applies local quality by creating recessed sections with different depths and inclined surface angles at specific locations on the array substrate. These localized structural variations cause different laser energy absorption and crystallization degrees in different regions, enabling switching TFTs and driving TFTs to have different poly-Si grain sizes and thus different on-state currents, while still using a uniform excimer laser annealing process across the entire substrate.
Solution Approach 2:
The patent changes physical parameters by varying the depth of recessed sections and the angles of their inclined surfaces. These parameter changes affect how laser energy is absorbed and distributed during excimer laser annealing, resulting in different crystallization degrees and poly-Si grain sizes in different regions, thereby achieving differentiated on-state currents for different TFT types.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the achievement of different degrees of crystallization on a single array substrate, meeting the distinct on-state current requirements of switching and driving TFTs, enhancing the performance of flat display panels.
Implementation Method 1
when the a-Si film at each recessed section is subjected to the excimer laser annealing treatment so as to melt and crystallize the a-Si film into the poly-Si film
Implementation Method 2
melt and crystallize the a-Si film into the poly-Si film
Data Source
AI summary
The present disclosure provides an array substrate, a manufacturing method thereof, a display panel and a display device. A base substrate of the array substrate or a buffer layer on the base substrate is provided with a plurality of recessed sections, each recessed section is provided with at least one inclined surface, and a thin film transistor (TFT) is arranged at the inclined surface of each recessed section. The recessed sections are divided into at least two types. In the recessed sections of different types, angles between a horizontal surface of the array substrate and the inclined surfaces on which the TFTs are arranged are different from each other.