Array Substrate Selective Etch With Silane Surface Protection
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Solution Overview
Problem
The use of strong acid and/or strong alkali for recycling substrates in discarded array substrates often damages the substrate, resulting in poor characteristics such as high surface roughness and low light transmission rates, necessitating additional surface treatments and increasing manufacturing costs.
Innovation Solution
A method involving a selective etch using a solution of deionized water, hydrogen peroxide, and an acid, with an alkoxy silane compound added to form a protective layer on the substrate, allowing for the removal of the component layer without damaging the substrate, thereby achieving low surface roughness and high light transmission rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If strong acid and/or strong alkali is used to remove components on the substrate, then the component layer is effectively removed, but the substrate is damaged resulting in high surface roughness and low light transmission rate
Solution Approach 1:
The patent introduces an intermediary substance (protective film) that mediates between the etching solution and the substrate. This protective film allows the etching solution to remove the component layer while preventing direct contact and damage to the substrate, thus resolving the contradiction between effective component removal and substrate protection
Solution Approach 2:
The patent changes the chemical parameters of the etching solution by using a specific composition (containing HF, HNO3, and CH3COOH in controlled ratios) instead of strong acid/alkali alone. This parameter change enables selective etching that removes components while preserving substrate integrity, achieving both high manufacturing precision and ease of manufacture
2Productivity
If strong acid and/or strong alkali is used for component removal, then the etching process is effective, but additional surface treatment is needed increasing process time and manufacturing cost
Solution Approach 1:
The patent applies preliminary action by forming a protective film on the substrate before the etching process. This pre-protection measure ensures that the substrate is already protected when exposed to the etching solution, eliminating the need for subsequent surface treatment steps and reducing overall process time while maintaining substrate quality
3Reliability
If strong acid and/or strong alkali is used to remove components, then the component layer is completely removed, but the substrate characteristics deteriorate
Solution Approach 1:
The protective film serves as an intermediary barrier that allows complete component layer removal while preventing harmful effects on the substrate. The film is selectively removed with the components but protects the substrate throughout the process, achieving both complete removal and no substrate damage
Solution Approach 2:
By changing the chemical composition parameters of the etching solution to a specific formula containing controlled ratios of HF, HNO3, and CH3COOH, the patent achieves selective etching that completely removes the component layer while the protective film prevents substrate damage from these chemicals
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method effectively protects the substrate from etching, resulting in improved surface quality and reduced manufacturing costs by forming a protective layer that prevents damage from the etching solution, enabling the reuse of the etching solution through regeneration.
Implementation Method 1
An alkoxy silane compound is added to the first solution to prepare a second solution
Implementation Method 2
an alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed
Implementation Method 3
Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution... The array substrate is placed into the second solution to remove the component layer
Data Source
AI summary
A method of performing a selective etch on an array substrate including the following is provided, and the array substrate includes a substrate and a component layer disposed on the substrate. Deionized water, hydrogen peroxide, and an acid are mixed to prepare a first solution, and the acid includes sulfuric acid, hydrochloric acid, oxalic acid or a combination thereof. An alkoxy silane compound is added to the first solution to prepare a second solution. The array substrate is placed into the second solution to remove the component layer, and an aging second solution is formed. The substrate is taken out from the aging second solution.