Array Substrate Layout to Limit TFT Leakage After Screen Cutting
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Solution Overview
Problem
Thin film transistors in display panels prone to leakage after screen cutting, leading to abnormal images due to the flat capacitor structure between the thin film transistor, frame starting signal line, and gate driving circuit, causing connectivity issues when the screen is resized.
Innovation Solution
The array substrate design includes a thin film transistor and gate driving circuit with a first insulating layer between the first metal layer corresponding to the output terminal of the thin film transistor and the second metal layer corresponding to the trigger signal input terminal of the gate driving circuit, where the projected area of the first metal layer on the first insulating layer is partially overlapped with the projected area of the second metal layer, reducing the facing area and minimizing leakage risk.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If a thin film transistor is arranged between the frame starting signal line and the gate driving circuit structure to enable screen cutting, then the gate driving circuit can be triggered after cutting, but the thin film transistor becomes prone to leakage due to the flat capacitor structure at the connecting point
Solution Approach 1:
The patent transforms the traditional planar parallel connection into a three-dimensional stacked configuration. The first metal layer is positioned at the output terminal of the thin film transistor, while the second metal layer is positioned at the input terminal of the gate driving circuit, with a first insulating layer separating them vertically. This spatial separation in the third dimension eliminates the harmful flat capacitor effect while maintaining electrical connectivity through controlled overlap and laser fusion.
Solution Approach 2:
The first insulating layer serves as an intermediary between the first metal layer and the second metal layer. It provides electrical isolation while allowing controlled interaction through overlap regions, enabling the connection to be established via laser fusion without direct contact between the metal layers, thus preventing leakage while maintaining signal transmission.
2Ease of operation
If the thin film transistor connection structure is used for screen cutting, then the first stage frame driving circuit can be triggered by the newly added frame starting signal line, but abnormal images are displayed due to leakage at the connecting point
Solution Approach 1:
By transitioning from a two-dimensional planar connection to a three-dimensional stacked arrangement with vertical separation, the patent eliminates the flat capacitor structure that causes leakage. The overlapping metal layers connected through the insulating layer via laser fusion provide a reliable connection that transmits trigger signals without generating harmful leakage currents that would cause abnormal images.
3Adaptability or versatility
If a frame starting signal line and thin film transistor are added to assist screen cutting, then the gate driving circuit can be triggered after cutting, but the flat capacitor structure causes leakage when cutting is not needed
Solution Approach 1:
The patent eliminates the flat capacitor structure by separating the metal layers in the vertical dimension with an insulating layer. This three-dimensional configuration prevents parasitic capacitance formation between adjacent conductors, thereby reducing leakage current while preserving the adaptability for screen size adjustment through the laser-fusion connection mechanism.
Solution Approach 2:
The first insulating layer acts as an intermediary that prevents direct electrical contact between the first and second metal layers, eliminating the flat capacitor effect and associated leakage current. The insulating layer allows the connection to be established only when needed through laser fusion, preventing energy loss during normal operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces the leakage risk between the thin film transistor and the gate driving circuit, ensuring normal operation and preventing abnormal image display on cut screens by minimizing the facing area and ensuring reliable signal transmission.
Implementation Method 1
a first insulating layer is provided between a first metal layer corresponding to the output terminal of the thin film transistor and a second metal layer corresponding to the trigger signal input terminal of the gate driving circuit
Implementation Method 2
the projected area of the first metal layer on the first insulating layer is partially overlapped with the projected area of the second metal layer on the first insulating layer
Data Source
AI summary
Disclosed are an array substrate, a display panel and a display. The array substrate is provided with a thin film transistor and a gate driving circuit. A trigger signal input terminal of the gate driving circuit corresponds to an output terminal of the thin film transistor, a first insulating layer is provided between a first metal layer corresponding to the output terminal of the thin film transistor and a second metal layer corresponding to the trigger signal input terminal of the gate driving circuit. A projected area of the first metal layer on the first insulating layer is partially overlapped with a projected area of the second metal layer on the first insulating layer.