Array Substrate Top Gate Electrode Light Shielding
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Solution Overview
Problem
Metal-oxide TFTs in display technology face instability due to light-induced defects, with existing solutions either requiring additional layers that increase fabrication complexity and cost or providing incomplete protection against strong light irradiation.
Innovation Solution
An array substrate with a top gate electrode formed at the same layer as the touch leading wire, using opaque metals to cover the metal-oxide semiconductor channel, integrated into a single fabrication process, reducing the need for additional photomasks and supporting techniques, and enhancing signal transmission while minimizing light-induced defects.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a protective layer is grown on the channel layer to reduce light-induced defects, then the barrier for generating light-induced defects is increased, but the fabrication complexity is increased due to additional layers
Solution Approach 1:
The top gate electrode is merged with the light-shielding layer function, combining two separate functions (gate control and light shielding) into a single structural element. This eliminates the need for separate protective layers while maintaining both electrical functionality and light protection.
Solution Approach 2:
The top gate electrode serves multiple functions: it provides gate control for the transistor operation and simultaneously acts as a light-shielding layer to prevent light-induced defects in the metal-oxide semiconductor channel, reducing the number of additional layers needed.
2Reliability
If an opaque metal layer is adopted as a light-shielding layer to eliminate light irradiation influence, then the stability of metal-oxide TFT is improved, but the fabrication cost is increased due to additional photomask requirements
Solution Approach 1:
The top gate electrode is formed at the same layer as the touch leading wire, merging the gate electrode function with the light-shielding function. This integration eliminates the need for additional photomasks and fabrication steps that would be required for separate light-shielding layers.
Solution Approach 2:
The top gate electrode simultaneously serves as the control electrode for the transistor and as the light-shielding layer, providing dual functionality without requiring separate fabrication processes or additional materials.
3Ease of manufacture
If the top gate electrode is formed at the same layer as the touch leading wire, then the fabrication complexity is reduced by eliminating additional photomasks, but the design complexity increases due to integrated structure
Solution Approach 1:
The top gate electrode and touch leading wire are formed at the same layer using the same fabrication process, merging two structural elements into a single fabrication step. This reduces the total number of photomasks and processing steps while the resulting integrated structure provides both gate control and light shielding functions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach improves the reliability of the peripheral driving circuit, reduces fabrication costs, and effectively eliminates the influence of light irradiation on the stability of metal-oxide semiconductor devices without increasing complexity or cost.
Implementation Method 1
using opaque metals to cover the semiconductor channel and reduce photocurrent
Data Source
AI summary
An array substrate, a touch screen, a touch display device and fabrication methods are provided. The array substrate includes a base substrate having a display region and a non-display region adjacent to the display region, a plurality of touch leading wires disposed in the display region, a plurality of touch electrode blocks disposed in the display region and electrically connected to the plurality of touch leading wires, and a peripheral driving circuit having a plurality of driving transistors disposed in the non-display region. Each driving transistor includes a top gate electrode formed at a same layer as the touch leading wire.