Array Substrate Trench Bent Portions for Uniform Exposure
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The existing array substrates face challenges in ensuring uniform exposure and etching of trenches between the source and drain in both display and non-display areas due to differences in trench shapes, leading to non-uniform exposure and incomplete etching, which affects the performance and quality of thin film transistors.
Innovation Solution
The array substrate design features thin film transistors in both areas with trenches having bent portions that are at least partially the same in shape, ensuring consistent exposure performance and avoiding photoresist residues and defective etching.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the trench between source and drain in GOA thin film transistor has a U-shaped structure to save space, then space utilization is improved, but exposure uniformity deteriorates causing photoresist residues and incomplete etching
Solution Approach 1:
The patent applies local quality by introducing a bent portion specifically in the trench region between source and drain, while keeping other parts of the thin film transistor structure unchanged. This localized modification to the trench shape ensures uniform photoresist exposure in the critical trench area without affecting the overall space-saving U-shaped structure of the GOA transistor.
Solution Approach 2:
Instead of maintaining the conventional U-shaped trench that saves space but causes exposure non-uniformity, the patent inverts the approach by using a bent portion with different geometric characteristics. This inversion of the trench geometry principle allows the structure to prioritize exposure uniformity while still maintaining compactness through the bent configuration.
2Area of moving object
If different trench shapes are used in GOA area and pixel area, then space saving in non-display area is improved, but etching completeness deteriorates due to photoresist residues
Solution Approach 1:
The patent applies local quality by introducing a bent portion specifically in the trench region between source and drain, while keeping other parts of the thin film transistor structure unchanged. This localized modification to the trench shape ensures uniform photoresist exposure in the critical trench area without affecting the overall space-saving U-shaped structure of the GOA transistor.
3Manufacturing precision
If standardization of thin film transistor structures is implemented, then exposure performance uniformity is improved, but design flexibility deteriorates
Solution Approach 1:
The patent applies local quality by introducing a bent portion specifically in the trench region between source and drain, while keeping other parts of the thin film transistor structure unchanged. This localized modification to the trench shape ensures uniform photoresist exposure in the critical trench area without affecting the overall space-saving U-shaped structure of the GOA transistor.
Data Source
AI summary
The present invention relates to an array substrate and a display device. The array substrate comprises a first thin film transistor arranged on a non-display area of the array substrate and a second thin film transistor arranged on a display area of the array substrate, a part of a first active layer corresponding to a region between a first source and a first drain in the first thin film transistor forms a first trench, and a part of a second active layer corresponding to a region between a second source and a second drain in the second thin film transistor forms a second trench, the first trench has at least one first bent portion, the second trench has a second bent portion, and bending angles of the first bent portion and the second bent portion are the same or explementary angles.