Array Substrate Dual U-Shielding for TFT Afterimage Control
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Solution Overview
Problem
Conventional organic light emitting diode (OLED) display devices face issues with moving charges between organic and inorganic film layers, which deteriorate the electrical performance and optical evaluation of thin film transistors, leading to residual image problems.
Innovation Solution
An array substrate design featuring dual U-shaped conductor structures formed by shielding layers connected to source and drain electrodes, effectively shielding moving charges and maintaining excellent electrical properties while mitigating afterimages.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of energy
If LTPS is used as an active layer in TFT to achieve low power consumption, then power consumption is reduced, but leakage current increases due to greater carrier mobility
Solution Approach 1:
The patent changes the material parameter of the active layer from LTPS to LTPO (low temperature polycrystalline oxide), which has different electrical characteristics with lower carrier mobility, thereby reducing leakage current while maintaining low power consumption
2Ease of manufacture
If organic film layer and inorganic film layer are used below TFT device, then device structure is formed, but moving charges in these layers deteriorate electrical performance and cause residual images
Solution Approach 1:
The patent introduces a buffer layer as an intermediary between the base layer and the TFT device, and shielding layers to isolate moving charges in the organic and inorganic film layers from the TFT active layer, thereby preventing charge accumulation that causes residual images while maintaining the necessary device structure
Solution Approach 2:
The patent extracts or removes the harmful effect of moving charges by using shielding layers that block the movement of charges from the organic and inorganic film layers into the TFT device, separating the harmful charge movement from the functional device operation
Data Source
AI summary
The present invention provides an array substrate and a manufacturing method thereof, the array substrate forms a dual U-shaped conductor structure encompassing a first thin film transistor and a second thin film transistor by a first light shielding layer, a second light shielding layer, a first shielding layer, and a second shielding layer to perfectly shield moving charges in the film layer under the thin film transistor and the film layers on two sides of the thin film transistor outside the dual U-shaped conductor structure to keep excellent electrical properties of a device.