Associative Gas Supply Control Using Temperature-Linked Pressure Limits

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Solution Overview

Problem

Conventional methods for supplying associative gases like hydrogen fluoride to semiconductor manufacturing apparatuses face challenges in accurately controlling flow rates due to association and dissociation phenomena, which are not adequately addressed by independent temperature and pressure limitations, leading to inefficiencies and potential over- or under-supply issues.

Innovation Solution

A method involving the determination of maximum allowable pressure based on equilibrium vapor pressure data, combined with temperature adjustments and conversion factor analysis, to prevent association and ensure accurate flow control of associative gases.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If temperature and pressure are limited independently to prevent association, then association is prevented, but the control range is overly restricted and operational flexibility is reduced

Engineering Contradiction:
Improveassociation preventionVSAvoidoperational flexibility
Core Design Contradiction:
ReliabilityVSAdaptability or versatility

Solution Approach 1:

The invention changes from independent temperature and pressure limitations to a coupled parameter control approach. By establishing a maximum allowable pressure that varies with temperature (Pmax(T)) based on equilibrium vapor pressure data, the system allows dynamic adjustment of pressure limits according to actual temperature conditions, thereby preventing association while maintaining operational flexibility.

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention introduces dynamic control where the pressure limit is not fixed but varies with temperature. The control system continuously monitors temperature and adjusts the maximum allowable pressure accordingly, creating a dynamic operating envelope that adapts to changing conditions rather than using static independent limits.

Inventive Principle:
Principle #15Dynamics

2Ease of operation

If flow rate control is performed without considering association phenomena, then control simplicity is maintained, but flow rate measurement accuracy deteriorates

Engineering Contradiction:
Improvecontrol simplicityVSAvoidflow rate measurement accuracy
Core Design Contradiction:
Ease of operationVSMeasurement precision

Solution Approach 1:

The invention applies preliminary action by establishing temperature and pressure control measures before flow rate measurement and control. By ensuring the gas remains in a dissociated state through proper T-P control, the subsequent flow rate measurement becomes accurate without requiring complex compensation algorithms or correction factors.

Inventive Principle:
Principle #10Preliminary action

3Device complexity

If conventional flow control methods are used for associative gases, then device complexity is minimized, but flow rate control accuracy deteriorates due to association and dissociation

Engineering Contradiction:
Improvecontrol system complexityVSAvoidflow rate control accuracy
Core Design Contradiction:
Device complexityVSManufacturing precision

Solution Approach 1:

The invention implements feedback control by continuously monitoring temperature and pressure and using this information to adjust the maximum allowable pressure setting. The control system compares actual T-P conditions against the Pmax(T) curve and makes real-time adjustments to maintain operation within the safe region, ensuring accurate flow control without requiring complex additional hardware.

Inventive Principle:
Principle #23Feedback

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for precise and stable supply of associative gases, enhancing the quality and productivity of semiconductor devices by preventing unwanted association and dissociation, thus improving operational efficiency.

Implementation Method 1

molecules of hydrogen fluoride gas associate with each other through hydrogen bonds to form multimers with a degree of association of about 2 to 6

Methodology Applied
Scientific EffectHydrogen bonding: Chemical Bonding

Implementation Method 2

The boiling point of hydrogen fluoride is approximately 20° C. In order to supply hydrogen fluoride in a gaseous state to a semiconductor manufacturing apparatus, it is necessary to heat hydrogen fluoride gas in order to prevent it from liquefying

Methodology Applied
Scientific EffectPhase change prevention through heating: Heating

Data Source

PatentUS20250246448A1Method for supplying associative gas to semiconductor manufacturing apparatus
Publication Date: 2025.07.31 KUWANA METALS LTD
  • US20250246448A1 patent drawing
  • US20250246448A1 patent drawing
  • US20250246448A1 patent drawing

AI summary

The present disclosure determines a maximum allowable pressure Pmax(T) at which it is possible to supply associative gas without causing association, on the basis of equilibrium vapor pressure data acquired for the associative gas, and adjusts the pressure and/or temperature of the associative gas such that the measured pressure of the associative gas does not exceed the maximum allowable pressure. The maximum allowable pressure Pmax(T) is preferably determined on the basis of a stable region of a conversion factor CF of the associative gas as referenced to a calibration gas with which association is unlikely to occur. This makes it possible to stably supply, to a semiconductor manufacturing device, associative gas with which chemical association readily occurs.