Asymmetric Decoupling MOSFET Cells for Stable IC Supply Voltage

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Solution Overview

Problem

Integrated circuits face system failures due to noise caused by rapid fluctuations in the potential difference between supply voltages, which existing decoupling cells struggle to stabilize effectively.

Innovation Solution

An integrated circuit design incorporating an asymmetric decoupling cell with a higher number of P-type MOSFETs as main decoupling capacitors, along with N-type MOSFETs and dummy MOSFETs, to maintain a stable voltage difference and improve leakage current characteristics.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional decoupling cell with equal numbers of P-type and N-type MOSFETs is used, then the circuit structure is simple and symmetric, but the leakage current characteristics are poor and voltage stability is insufficient

Engineering Contradiction:

Improvevoltage stabilityVSAvoidcell structure complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

The patent applies asymmetry by configuring different numbers of P-type and N-type MOSFETs in the decoupling cell. Specifically, the first decoupling cell includes two P-type MOSFETs and one N-type MOSFET, while the second decoupling cell includes one P-type MOSFET and two N-type MOSFETs. This asymmetric configuration optimizes leakage current characteristics and voltage stability beyond what symmetric designs achieve.

Inventive Principle:

Principle #4Asymmetry

Solution Approach 2:

The patent implements local quality by creating different decoupling cell configurations for different functional requirements. The first decoupling cell with two P-type MOSFETs is optimized for certain voltage stabilization scenarios, while the second decoupling cell with two N-type MOSFETs is optimized for complementary scenarios. This localized optimization enhances overall circuit reliability.

Inventive Principle:

Principle #3Local quality

2Reliability

If the number of decoupling MOSFETs is increased to improve voltage stabilization, then voltage stability improves, but the area occupied by the decoupling cell increases

Engineering Contradiction:

Improvevoltage stabilization capabilityVSAvoiddecoupling cell area

Core Design Contradiction:

ReliabilityVSArea of stationary object

Solution Approach 1:

The patent merges multiple functions into the decoupling cell structure. The same MOSFETs that provide decoupling capacitance also serve as transmission gates for signal routing. This merging allows the circuit to achieve voltage stabilization with fewer dedicated components, reducing the overall cell area while maintaining reliability.

Inventive Principle:

Principle #5Merging (Combining)

Solution Approach 2:

The MOSFETs in the decoupling cell are designed to serve multiple purposes: they provide decoupling capacitance for voltage stabilization and simultaneously function as transmission gates for signal switching. This multi-functionality reduces the need for separate components, thereby reducing the total area occupied by the decoupling cell while maintaining effective voltage stabilization.

Inventive Principle:

Principle #6Universality (Multi-functionality)

Data Source

PatentUS11756949B2Integrated circuit including asymmetric decoupling cell and method of designing the same

Publication Date: 2023.09.12 SAMSUNG ELECTRONICS CO LTD

AI summary

An integrated circuit includes at least one decoupling cell, wherein the at least one decoupling cell includes at least one P-type decoupling MOSFET and at least one N-type decoupling MOSFET, and a number of the at least one P-type decoupling MOSFET is different from a number of the at least one N-type decoupling MOSFET.