Asymmetric Drift Region High Voltage Transistor Structure
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Solution Overview
Problem
Current high voltage transistor devices face challenges in increasing breakdown voltage as electronic devices shrink, requiring innovative solutions to enhance their performance.
Innovation Solution
The proposed high voltage transistor structure features asymmetrically sized drift regions with varying depths and widths, along with epitaxial layers and cap layers, to increase breakdown voltage, allowing for flexible adjustment through material and thickness modifications.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Volume of moving object
If the size of electronic devices continues to shrink, then device integration and portability are improved, but the breakdown voltage of high voltage transistor devices becomes difficult to increase
Solution Approach 1:
The patent applies asymmetry by configuring the first drift region and second drift region with different sizes, where the second drift region has a greater width than the first drift region. This asymmetric configuration allows different regions to contribute differently to the breakdown voltage while maintaining a compact overall device structure, thus resolving the contradiction between small device size and high breakdown voltage.
Solution Approach 2:
The patent implements local quality by creating regions with different dopant concentrations and geometries. The first drift region has a first dopant concentration while the second drift region has a second dopant concentration, and they have different widths. This allows each region to be optimized for its specific function within the compact device, enabling high breakdown voltage without increasing overall device size.
2Reliability
If asymmetric drift region configuration is used to increase breakdown voltage, then reliability is improved, but device structure becomes more complex
Solution Approach 1:
The patent applies segmentation by dividing the drift region into multiple segments (first drift region and second drift region) with different characteristics. Each segment can be independently optimized for dopant concentration and geometry, allowing the complex functionality of high breakdown voltage to be achieved through modular regional design rather than a single complex structure.
Solution Approach 2:
The patent utilizes parameter changes by varying the dopant concentration and geometric dimensions (width and depth) of different drift regions. The first drift region has a first dopant concentration and the second drift region has a second dopant concentration, along with different widths. These parameter variations enable tailored optimization of each region to contribute to breakdown voltage while maintaining manageable structural complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively increases the breakdown voltage of high voltage transistor devices, enabling flexible adjustment to meet the demands of shrinking electronic devices.
Implementation Method 1
the material of the first drift region and the material of the second drift region may be an epitaxial material, respectively
Data Source
AI summary
A high voltage transistor structure including a substrate, a first drift region, a second drift region, a first cap layer, a second cap layer, a gate structure, a first source and drain region, and a second source and drain region is provided. The first and second drift regions are disposed in the substrate. The first and second cap layers are respectively disposed on the first and second drift regions. The gate structure is disposed on the substrate and located over at least a portion of the first drift region and at least a portion of the second drift region. The first and second source and drain regions are respectively disposed in the first and second drift regions and located on two sides of the gate structure. The size of the first drift region and the size of the second drift region are asymmetric.