Asymmetric Second Electrode Layer for Memory Device Field Control
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in achieving high element density due to poor electric field distribution during erasing and programming, leading to memory window degradation.
Innovation Solution
A semiconductor structure comprising a first electrode layer, a second electrode layer, and a dielectric layer, where the second electrode layer's width increases away from the dielectric layer and its dopant concentration decreases towards it, improving electric field distribution and carrier injection/trapping during memory operations.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If 3D stack memory device is used to increase memory capacity and element density, then memory capacity and cost per cell are improved, but electric field distribution during erasing and programming deteriorates, leading to memory window degradation
Solution Approach 1:
The patent applies local quality by creating a non-uniform dopant concentration distribution within the second electrode layer. The dopant concentration is higher at regions farther from the dielectric layer and lower at regions closer to it, which locally optimizes the electric field distribution during programming and erasing operations. This gradient structure allows different regions of the electrode to have different electrical properties, improving overall memory window while maintaining high density.
Solution Approach 2:
The patent employs asymmetry by designing the second electrode layer with an irregular width profile where the width varies in the direction away from the dielectric layer. This asymmetric geometry creates a more favorable electric field distribution compared to a uniform width structure, addressing the memory window degradation issue while preserving the high capacity benefits of 3D stacking.
2Quantity of substance
If 3D stack memory device is used to increase element density, then element density is improved, but electric field distribution during programming deteriorates
Solution Approach 1:
The patent applies local quality by creating a non-uniform dopant concentration distribution within the second electrode layer. The dopant concentration is higher at regions farther from the dielectric layer and lower at regions closer to it, which locally optimizes the electric field distribution during programming and erasing operations. This gradient structure allows different regions of the electrode to have different electrical properties, improving overall memory window while maintaining high density.
Solution Approach 2:
The patent employs parameter changes by modifying the dopant concentration parameter throughout the second electrode layer. By creating a gradient where dopant concentration varies with position (higher farther from dielectric, lower closer to dielectric), the electrical characteristics are optimized to improve electric field distribution during programming operations while maintaining high element density.
3Quantity of substance
If 3D stack memory device is used to increase memory capacity, then memory capacity is improved, but electric field distribution during erasing deteriorates
Solution Approach 1:
The patent applies local quality by creating a non-uniform dopant concentration distribution within the second electrode layer. The dopant concentration is higher at regions farther from the dielectric layer and lower at regions closer to it, which locally optimizes the electric field distribution during programming and erasing operations. This gradient structure allows different regions of the electrode to have different electrical properties, improving overall memory window while maintaining high density.
Solution Approach 2:
The patent employs asymmetry by designing the second electrode layer with an irregular width profile where the width varies in the direction away from the dielectric layer. This asymmetric geometry creates a more favorable electric field distribution compared to a uniform width structure, addressing the memory window degradation issue while preserving the high capacity benefits of 3D stacking.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design enhances memory window size by optimizing electric field distribution and carrier behavior, thereby increasing memory capacity and density while reducing gate injection.
Implementation Method 1
A thermal step is performed to diffuse a dopant from the second electrode material into the first electrode material
Data Source
AI summary
A semiconductor structure and a method for manufacturing the same are disclosed. The semiconductor structure includes a first electrode layer, a second electrode layer and a dielectric layer between the first electrode layer and the second electrode layer. A width of the second electrode layer becomes larger in a direction away from the dielectric layer.