Asymmetric Electrode Structure for Uniform Low-Temperature Plasma
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Solution Overview
Problem
Substrate processing in semiconductor manufacturing faces challenges in achieving uniform film formation due to difficulties in uniformly processing films at lower temperatures using plasma, especially with low heat resistance materials and fine pattern formation in mass-produced devices.
Innovation Solution
An electrode structure is designed with a primary electrode of greater area than a secondary electrode, both configured as integrated structures, generating plasma within a substrate processing apparatus. The primary electrode is applied with an appropriate electric potential, while the secondary electrode is at reference potential, facilitating uniform plasma distribution and efficient film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If substrate processing is performed using plasma at lower temperatures, then diffusion of impurities is suppressed and low heat resistance materials can be used, but uniform processing of films becomes difficult to achieve
Solution Approach 1:
The patent applies asymmetry by configuring the primary electrode with a larger area than the secondary electrode. This asymmetric electrode area ratio creates a more uniform electric field distribution across the substrate surface, enabling uniform plasma generation and film processing even at lower temperatures where uniformity is typically difficult to achieve.
Solution Approach 2:
The patent changes the physical parameter of electrode area to resolve the contradiction. By setting the primary electrode area larger than the secondary electrode area, the electric field distribution is optimized to produce uniform plasma at lower temperatures, thereby achieving both low-temperature processing and uniform film formation.
2Manufacturing precision
If the primary electrode area is increased relative to the secondary electrode, then plasma distribution uniformity is improved, but electrode structure complexity increases
Solution Approach 1:
The patent merges the primary and secondary electrodes into a single integrated electrode structure. This combination simplifies the overall device configuration while maintaining the asymmetric area ratio that ensures uniform plasma distribution, thus achieving uniform processing without proportionally increasing device complexity.
Solution Approach 2:
The patent applies local quality by creating different electrode areas in specific locations (larger primary electrode, smaller secondary electrode) to optimize plasma distribution. This localized differentiation in electrode geometry achieves uniform plasma coverage without requiring complex overall structural changes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration ensures high-density, uniform plasma distribution, enhancing both the efficiency and quality of substrate processing, particularly in forming films on semiconductor wafers with low heat resistance materials and fine patterns.
Implementation Method 1
an electrode structure configured to generate plasma
Data Source
AI summary
According to one aspect of the technique of the present disclosure, there is provided an electrode structure capable of generating a plasma, including: a primary electrode to which an appropriate electric potential is applied; and a secondary electrode to which a reference potential is applied, wherein an area of the primary electrode is set to be greater than an area of the secondary electrode, and the primary electrode is configured as an integrated structure.