Asymmetric Lid Structure for Semiconductor Package Stress Reduction

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Solution Overview

Problem

Existing semiconductor package structures face issues with edge cracking and chipping due to stress concentration at the edges of the die structure, which are not adequately addressed by current packaging technologies.

Innovation Solution

A semiconductor device structure with a lid structure featuring a T-like shape, where the top portion extends beyond the die structure's sidewalls and has a larger surface area than the bottom portion, reducing stress concentration by creating discontinuous sidewalls and aligning them differently, thereby reducing the risk of cracking and chipping. The lid structure is made of heat-conducting materials and includes an adhesive layer for heat dissipation, with a package layer filling the spaces between the die and lid structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional lid structure with aligned sidewalls is used, then the manufacturing process is simple, but stress concentration occurs at the edges causing cracking and chipping

Engineering Contradiction:
Improveedge cracking resistanceVSAvoidlid structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The lid structure employs asymmetric sidewall alignment where the first and second sidewalls are intentionally misaligned with the die structure edges. This asymmetric configuration creates discontinuous sidewalls that distribute stress more evenly, preventing stress concentration at the edges and eliminating cracking and chipping issues while maintaining manufacturing feasibility

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The lid structure is segmented into distinct portions with different sidewall alignments. The first sidewalls extend beyond the die structure in a first direction, while second sidewalls extend in a second direction, creating discrete stress distribution zones that prevent continuous stress pathways that would lead to cracking

Inventive Principle:
Principle #1Segmentation

2Reliability

If the lid structure covers the entire die structure, then protection is maximized, but stress concentration at edges increases

Engineering Contradiction:
Improveedge stress distributionVSAvoidedge strength
Core Design Contradiction:
ReliabilityVSStrength

Solution Approach 1:

The asymmetric sidewall design creates intentional misalignment between the lid structure and die structure edges. This misalignment ensures that the lid does not perfectly overlay the die edges, thereby distributing mechanical stress across a broader area and preventing stress concentration that would weaken edge strength

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

Different portions of the lid structure have different sidewall configurations tailored to local stress requirements. The first and second sidewalls extend in different directions with different alignment characteristics, providing localized stress distribution optimization at different edges of the die structure

Inventive Principle:
Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The described structure effectively reduces the risk of edge cracking and chipping, improves the performance of semiconductor devices by distributing stress and enhancing heat dissipation, and increases production yields by simplifying the fabrication process.

Implementation Method 1

The lid structure is made of heat-conducting materials and includes an adhesive layer for heat dissipation

Methodology Applied
Scientific EffectHeat conduction: Conduction (thermal)

Data Source

PatentUS10157863B2Method for forming a lid structure for a semiconductor device package
Publication Date: 2018.12.18 PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC
  • US10157863B2 patent drawing
  • US10157863B2 patent drawing
  • US10157863B2 patent drawing

AI summary

A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a die structure formed over the substrate. The semiconductor device structure also includes a lid structure formed over the die structure. The lid structure includes a top portion with a top length and a bottom portion with a bottom length, and the top length is greater than the bottom length. The semiconductor device structure also includes a package layer formed between the lid structure and the die structure, and a sidewall of the bottom portion of the lid structure is not aligned with a sidewall of the die structure.