Asymmetric Magnetic Memory Pad for Field-Free Programming
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Solution Overview
Problem
Current magnetic memory points require an external magnetic field for programming, which poses practical production challenges and limits the simplicity of programming operations.
Innovation Solution
A magnetic memory point with a doubly asymmetrical pad configuration, allowing programming by a current-induced magnetization reversal without an external magnetic field, and incorporating an antiferromagnetic layer for enhanced thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If an external magnetic field is applied for programming, then magnetization reversal can be achieved, but the programming process becomes complex and requires additional equipment
Solution Approach 1:
The patent extracts and removes the external magnetic field requirement from the programming process. By designing the magnetic memory point with specific magnetic layer configurations and spin-orbit coupling, the invention achieves magnetization reversal through current-induced effects alone, eliminating the need for external magnetic field equipment and simplifying the programming process.
Solution Approach 2:
The patent replaces the mechanical/external magnetic field system with an electrical current-based system. Instead of using external magnetic fields to induce magnetization reversal, the invention uses spin-orbit coupling and current-induced effects (such as spin transfer torque or spin Hall effect) to achieve the same magnetic switching, substituting one physical mechanism for another more controllable one.
2Ease of manufacture
If a symmetrical pad structure is used, then the manufacturing process is simpler, but thermal stability is insufficient leading to accidental state changes
Solution Approach 1:
The patent introduces asymmetry in the pad structure to enhance thermal stability. By creating a non-symmetrical configuration in the magnetic layers or electrode arrangement, the invention generates a preferred magnetization direction that is more resistant to thermal fluctuations and stray fields, preventing accidental state changes while maintaining manufacturability through standard fabrication processes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables simplified programming without a magnetic field and improves thermal stability by trapping magnetization, reducing the risk of accidental state changes due to thermal agitation or stray fields.
Implementation Method 1
For the magnetization to reverse in layer 11, spin-orbit coupling must also be present in the magnetic layer. To achieve this, the layer in contact with layer 11 (or separated from it by a thin separating layer) must, for example, be made of a material or composed of materials with strong spin-orbit coupling.
Implementation Method 2
a magnetic memory point with current-induced magnetization reversal
Implementation Method 3
incorporating an antiferromagnetic layer for enhanced thermal stability... improves thermal stability by trapping magnetization, reducing the risk of accidental state changes due to thermal agitation or stray fields.
Data Source
Figure 1A~2
Figure 3~4
Figure 5A~5J
AI summary
The invention relates to a memory slot comprising a pad (30) consisting of a stack of regions made of thin layers, comprising a first region (40) made of a nonmagnetic conducting material; a second region (41) made of a magnetic material exhibiting a magnetization in a direction perpendicular to the principal plane of the pad; a third region (42) made of a nonmagnetic conducting material of different characteristics to those of the first region; the pad resting on a conducting track (1) adapted to cause the flow of a programming current of chosen sense, in which the pad has an asymmetric shape with respect to any plane perpendicular to the plane of the layers and parallel to the central axis of the track, and with respect to its barycentre.