Asymmetric Magnetoresistive Element for Low Power Memory
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In magnetic memory technologies, the reduction of ferromagnetic material size for improved integration leads to increased coercivity, requiring higher switching magnetic fields and power consumption, while also compromising thermal stability and making it difficult to control edge domains for efficient switching.
Innovation Solution
A magnetoresistive effect element with a planar shape featuring a rectangular part and two projected parts, where the projected parts are offset from the center, reducing coercivity and stabilizing the magnetic field, thereby allowing for lower power consumption and higher thermal stability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the ferromagnetic material size is reduced for improved integration, then the integration density is improved, but the coercivity increases requiring greater switching magnetic field and power consumption
Solution Approach 1:
The ferromagnetic layer is designed with an asymmetric shape featuring a main body region and a protruding region. This asymmetric geometry creates non-uniform magnetic field distribution that reduces the switching magnetic field requirement, thereby lowering power consumption while maintaining small device size for high integration density.
Solution Approach 2:
The protruding region creates localized magnetic field concentration at specific positions. This local field enhancement allows for reduced switching field in critical areas while maintaining overall device miniaturization, resolving the contradiction between size reduction and power consumption.
2Productivity
If the ferromagnetic material size is reduced for improved integration, then the integration density is improved, but the thermal stability deteriorates
Solution Approach 1:
The asymmetric shape with protruding region creates specific magnetic domain configurations that enhance thermal stability through increased magnetic anisotropy energy, allowing small device dimensions to maintain stable information storage against thermal fluctuations.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This design achieves a smaller switching magnetic field, reduces power consumption, and enhances thermal stability, making it suitable for high-density magnetic memory applications without the need for additional structures to control edge domains.
Implementation Method 1
Magnetoresistive effect element and magnetic memory
Data Source
AI summary
A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.