Asymmetric MR Sensor Elements for Switching Accuracy
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Solution Overview
Problem
Magneto Resistive (MR) sensors with circular magneto-resistive elements face challenges in maintaining accurate state switching when the position of a magnet varies, requiring larger element sizes to maintain accuracy, and are susceptible to disturbance magnetic fields.
Innovation Solution
A magnetic sensor device with a switching region defined by a switching range and a variation range, utilizing a plurality of first divided elements formed by dividing a circular magneto-resistive element and consecutively rotated and rearranged to maximize the change in magnetoresistance value due to the magnetic field, allowing for reduced size while maintaining endurance to disturbance fields.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the size of the circular magneto-resistive element is increased to maintain accurate state switching when magnet position varies, then measurement precision is improved, but device size increases
Solution Approach 1:
The circular magneto-resistive element is divided into multiple segments (first divided elements and second divided elements) arranged in specific patterns. This segmentation allows the sensor to maintain high measurement precision for state switching while reducing the overall device size by optimizing the spatial distribution of sensitive elements rather than relying on a single large element
Solution Approach 2:
The patent employs asymmetric arrangements of the divided elements, with different configurations for first and second divided elements. This asymmetric design optimizes the magnetic field detection capability for state switching accuracy while minimizing the required sensor area, resolving the contradiction between precision and size
2Measurement precision
If the size of the circular magneto-resistive element is increased to maintain accurate state switching, then measurement precision is improved, but device complexity increases
Solution Approach 1:
By dividing the magneto-resistive element into multiple segments with systematic arrangements, the patent achieves high measurement precision through enhanced magnetic field sampling. The segmented structure provides multiple detection points that improve state switching accuracy while the regular patterning of segments helps manage the complexity through design standardization
3Device complexity
If undivided circular magneto-resistive elements are used to simplify the structure, then device complexity is reduced, but reliability against disturbance magnetic fields decreases
Solution Approach 1:
The division of the magneto-resistive element into multiple segments enhances reliability by providing distributed magnetic field detection capability. This segmentation allows the sensor to better distinguish between legitimate magnetic field changes and disturbance fields, improving endurance to interference while maintaining manageable structural complexity through systematic arrangement
Solution Approach 2:
Different regions of the divided elements are positioned to detect specific magnetic field characteristics. This local quality differentiation enables the sensor to selectively respond to relevant magnetic signals while filtering out disturbance fields, thereby improving reliability without requiring overly complex overall structures
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The magnetic sensor device achieves high switching accuracy and size reduction while being resilient to disturbance magnetic fields, improving upon the limitations of undivided circular magneto-resistive elements by enhancing magnetoresistance value changes and preventing erroneous determinations.
Implementation Method 1
a magnetic sensor comprising a plurality of first divided elements that are formed by dividing a first circular magneto-resistive element... change in a magnetoresistance value due to the magnetic field of the magnet
Data Source
AI summary
A magnetic sensor device includes a switching region defined by a switching range and a variation range, the switching range being set in a stroke direction of a magnet generating a radial magnetic field and defined by a start position and an end position for switching of the state, and the variation range being set in a direction intersecting the stroke direction and being a range of variation in the position of the magnet, and a magnetic sensor including plural first divided elements that are formed by dividing a first circular magneto-resistive element and are consecutively rotated and rearranged around the switching region such that change in a magnetoresistance value due to the magnetic field of the magnet in the switching region increases from the start position to the end position.