Asymmetric Semiconductor Pattern Layout for Scaled Device Isolation
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Solution Overview
Problem
As semiconductor devices are scaled down, their operation characteristics deteriorate, necessitating improved methods to enhance performance and reliability.
Innovation Solution
A semiconductor device design featuring active patterns with varying widths and isolation insulating layers, including a gate electrode structure that enhances electrical characteristics and reliability by optimizing the arrangement and contact of semiconductor and source/drain patterns.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If semiconductor devices are scaled down to increase integration, then device density increases, but operation characteristics deteriorate
Solution Approach 1:
The patent applies local quality by creating asymmetric semiconductor patterns with different widths (first semiconductor pattern wider than second, third wider than fourth) to provide different functional characteristics in different regions. This allows optimization of electrical characteristics in high-density configurations without uniform scaling degradation.
Solution Approach 2:
The invention employs asymmetry through non-uniform semiconductor pattern widths and asymmetric source/drain pattern dimensions. The first and third semiconductor patterns have greater widths than the second and fourth respectively, creating intentional asymmetry that maintains performance while enabling higher integration density.
2Reliability
If asymmetric semiconductor patterns with varying widths are used to improve electrical characteristics, then device performance improves, but manufacturing complexity increases
Solution Approach 1:
The patent segments the semiconductor device into distinct regions with different pattern widths (first/second semiconductor patterns and third/fourth semiconductor patterns). This segmentation allows each region to be optimized independently for electrical characteristics while maintaining overall device functionality.
Solution Approach 2:
The invention introduces width variation as an additional design dimension beyond standard scaling. By varying the width dimension of semiconductor and source/drain patterns, the patent achieves performance differentiation without requiring complex three-dimensional structures or additional fabrication dimensions.
3Reliability
If isolation insulating layers are added between active patterns to prevent unwanted connections, then device reliability improves, but manufacturing process time increases
Solution Approach 1:
The patent incorporates isolation insulating layers as integral parts of the device structure from the outset, rather than adding them as separate post-processing steps. The lower isolation insulating layer is positioned between active patterns during initial fabrication, and upper isolation insulating layers are integrated with source/drain patterns, streamlining the manufacturing process.
Data Source
AI summary
A semiconductor device includes a first active pattern and a second active pattern spaced apart from each other in a first direction, a first semiconductor pattern and a second semiconductor pattern overlapping the first active pattern, a third semiconductor pattern and a fourth semiconductor pattern overlapping the second active pattern, a lower isolation insulating layer between the first and second active patterns, source/drain patterns on the first and second active patterns and a gate electrode extending in the first direction. The first and third semiconductor patterns are arranged in the first direction as are the second and fourth semiconductor patterns. A width of the first semiconductor pattern in the first direction is greater than a width of the second semiconductor pattern in the first direction. A width of the third semiconductor pattern in the first direction is greater than a width of the fourth semiconductor pattern in the first direction.