Asymmetric Silicon Precursors for Thin-Film Step Coverage Control
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Solution Overview
Problem
Conventional silicon-containing thin film deposition methods face challenges in achieving excellent step coverage and thickness control for highly integrated semiconductor devices, and often result in films with impurities.
Innovation Solution
A novel silicon precursor compound in an asymmetric structure containing an alkoxide, represented by specific chemical formulas, is prepared through reactions with secondary amines or alkylaminosilanes, enabling deposition methods like CVD, PECVD, and ALD to form high-quality silicon-containing thin films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional precursors are used for silicon-containing thin film deposition, then the deposition process can be performed with standard materials, but the step coverage and thickness control are insufficient for highly integrated semiconductor devices
Solution Approach 1:
The patent employs asymmetric molecular structures in the silicon precursor compounds, where the asymmetry in molecular geometry and bonding patterns enables improved step coverage and thickness control during deposition, directly addressing the manufacturing precision requirements for highly integrated semiconductor devices
Solution Approach 2:
The patent modifies physical and chemical parameters of the silicon precursor compounds including molecular weight, volatility, and reactivity by changing the alkoxide groups and organic substituents, thereby optimizing deposition characteristics to achieve excellent step coverage and thickness control
2Ease of manufacture
If conventional precursors are used for thin film deposition, then the process can proceed with existing materials, but impurities are contained in the deposited thin film
Solution Approach 1:
The patent extracts and eliminates harmful impurity-forming components from the precursor molecular structure by designing specific asymmetric silicon compounds with controlled functional groups, thereby producing high-purity thin films while maintaining processability
Solution Approach 2:
The patent converts potential harmful byproducts into beneficial outcomes by selecting specific alkoxide groups and organic substituents that decompose cleanly during deposition, transforming what could be impurity sources into sources of high film purity
3Productivity
If high deposition rates are achieved using conventional precursors, then productivity increases, but film quality deteriorates
Solution Approach 1:
The patent introduces dynamic control capabilities in the deposition process by utilizing precursors with optimized volatility and reactivity parameters, allowing the deposition rate and film quality to be dynamically adjusted and optimized simultaneously, breaking the traditional trade-off between productivity and precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The silicon precursor compound allows for high deposition rates and excellent film quality, with sufficient volatility for various deposition techniques, particularly at high temperatures, addressing the limitations of conventional precursors.
Implementation Method 1
The silicon precursor compound allows for high deposition rates and excellent film quality, with sufficient volatility for various deposition techniques, particularly at high temperatures
Implementation Method 2
enabling deposition methods like CVD, PECVD, and ALD to form high-quality silicon-containing thin films
Implementation Method 3
enabling deposition methods like CVD, PECVD, and ALD to form high-quality silicon-containing thin films
Data Source
AI summary
The present invention relates to a silicon precursor compound in an asymmetric structure containing an alkoxide capable of preparing a silicon-containing thin film with high quality, to a method for preparing the same, and to a method for preparing a silicon-containing thin film using the silicon precursor compound in an asymmetric structure containing an alkoxide.