Asymmetric Silicon Substrate with Differential Trace Density

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Solution Overview

Problem

Conventional silicon-based substrates with symmetric designs waste resources and increase production costs due to high trace density requirements on both sides, which many package factories cannot meet with current apparatuses and processes.

Innovation Solution

A silicon-based substrate with an asymmetric structure, featuring a higher trace density on one side for electronic component connection and a lower trace density on the other side for printed circuit board connection, achieved through a wafer level semiconductor process with inorganic and organic dielectric layers, and through silicon vias for electrical connectivity.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If a symmetric design rule is applied to the silicon based substrate, then the structure is simple and manufacturing is easier, but resources are wasted and production cost increases due to unnecessary high trace density on both sides

Engineering Contradiction:
Improvemanufacturing simplicityVSAvoidresource waste
Core Design Contradiction:
Ease of manufactureVSLoss of substance

Solution Approach 1:

The patent applies asymmetry by designing the silicon based substrate with different trace densities on opposite sides. The first circuit substrate has high trace density for electronic component connection, while the second circuit substrate has lower trace density for printed circuit board connection. This asymmetric design eliminates resource waste while maintaining manufacturing feasibility.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent implements local quality by optimizing trace density according to specific functional requirements. The first surface has high trace density where electronic components are connected, while the second surface has lower trace density where printed circuit boards are connected. Each region's trace density matches its specific utility demand, avoiding unnecessary resource consumption.

Inventive Principle:
Principle #3Local quality

2Reliability

If high trace density is manufactured on both sides of the silicon wafer, then the substrate meets the symmetric design requirement, but production cost increases and many package factories cannot meet the requirement with current apparatuses and processes

Engineering Contradiction:
Improvedesign consistencyVSAvoidmanufacturing feasibility
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent resolves this contradiction by adopting asymmetric design where only the first circuit substrate requires high trace density for electronic component connection, while the second circuit substrate uses lower trace density for printed circuit board connection. This reduces manufacturing complexity and cost while maintaining design consistency through clear functional differentiation.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent changes the trace density parameter based on location and function. The first circuit substrate maintains high trace density for electronic component interfacing, while the second circuit substrate uses optimized lower trace density for printed circuit board connection. This parameter differentiation improves manufacturing feasibility without compromising reliability.

Inventive Principle:
Principle #35Parameter changes

3Stability of the object's composition

If the silicon based substrate follows conventional symmetric design, then the structure is standardized, but it is not optimized for actual utility demands leading to increased production cost

Engineering Contradiction:
Improvestructural standardizationVSAvoidproduction cost
Core Design Contradiction:
Stability of the object's compositionVSLoss of substance

Solution Approach 1:

The patent breaks conventional symmetric design standards by implementing asymmetric trace density distribution. The first circuit substrate uses high trace density for electronic component connection while the second circuit substrate uses lower trace density for printed circuit board connection. This asymmetric structure optimizes resource utilization and reduces production cost while maintaining structural stability through functional clarity.

Inventive Principle:
Principle #4Asymmetry

Solution Approach 2:

The patent applies local quality optimization by matching trace density to specific functional requirements rather than using uniform symmetric design. The first surface has high trace density where electronic components require dense interconnection, while the second surface has lower trace density where printed circuit boards are connected. This localized optimization reduces production cost while maintaining structural standardization through systematic design.

Inventive Principle:
Principle #3Local quality

Data Source

PatentUS8269316B2Silicon based substrate and manufacturing method thereof
Publication Date: 2012.09.18 XENOGENIC DEVELOPMENT LIMITED LIABILITY COMPANY
  • US8269316B2 patent drawing
  • US8269316B2 patent drawing
  • US8269316B2 patent drawing

AI summary

A silicon based substrate includes a silicon wafer, a first circuit substrate and a second circuit substrate. The silicon wafer includes a first surface and a second surface and at least a through silicon via. The first circuit substrate is disposed on the first surface and includes a plurality of first dielectric layers and a plurality of first conductive trace layers alternately stacked. The second circuit substrate is disposed on the second surface and includes a plurality of second dielectric layers and a plurality of second conductive trace layers alternately stacked. The trace density of the first conductive trace layers is higher than the trace density of the second conductive trace layers. Otherwise, the first dielectric layer includes an inorganic material and the second dielectric layer includes an organic material. A manufacturing method of the silicon based substrate is also provided.