Asymmetric Source Drain Contact Plugs for SOI Thermal Management
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Solution Overview
Problem
Semiconductor devices with a silicon-on-insulator (SOI) structure face challenges in heat dissipation due to high thermal resistance from transistors to heat dissipators, leading to unstable operation and inadequate heat dissipation effects, as existing technologies either require additional processes or restrict circuit layout.
Innovation Solution
The semiconductor device employs a greater number of source contact plugs than drain contact plugs to efficiently propagate heat from transistors to power supply and ground wiring, reducing thermal resistance and enhancing heat dissipation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If holes are formed in the insulator to dissipate heat, then heat dissipation is improved, but manufacturing complexity increases due to additional processes
Solution Approach 1:
The contact plugs serve dual functions: electrical connection and heat dissipation. The source contact plugs are strategically positioned to extend into the insulating layer, creating thermal pathways without requiring separate hole formation processes. This self-service approach eliminates additional manufacturing steps while achieving heat dissipation.
Solution Approach 2:
The contact plugs are designed to perform multiple functions simultaneously: providing electrical connection between metal layers and serving as heat dissipation pathways. By making the contact plugs multi-functional, the patent eliminates the need for separate heat dissipation structures and their associated manufacturing processes.
2Temperature
If wiring layers are added for heat dissipation, then heat dissipation is improved, but circuit layout flexibility is reduced
Solution Approach 1:
Existing source contact plugs are utilized for heat dissipation without requiring additional wiring layers. The contact plugs' strategic positioning and extension into the insulating layer create thermal pathways that work alongside existing circuit layouts, maintaining design flexibility.
Solution Approach 2:
The source contact plugs act as intermediaries that transfer heat from the semiconductor layer to the insulating layer and surrounding structures. This intermediary approach enables heat dissipation through existing structural elements rather than requiring new dedicated heat dissipation wiring layers.
3Temperature
If thermal resistance from transistor to heat dissipator is high, then heat dissipation is reduced, but modifying existing structures is complex
Solution Approach 1:
The source contact plugs are designed to extend into the insulating layer, creating thermal pathways that reduce thermal resistance from the transistor to heat dissipating structures. This self-service design reduces thermal resistance through existing contact plug structures without requiring complex modifications to the transistor or insulator.
Solution Approach 2:
The contact plugs are strategically positioned and dimensioned to create localized high-conductivity thermal pathways at critical heat generation points. By concentrating thermal conduction capability where needed most (at the source region), the patent reduces thermal resistance without requiring global structural modifications.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration improves heat dissipation effects by reducing thermal resistance and mitigating self-heating issues, allowing for more stable transistor operation and increased heat dissipation beyond previous technologies.
Implementation Method 1
heat is to be transferred from a heat generator in the form of a transistor to wiring layers and holes serving as heat dissipators
Data Source
AI summary
A semiconductor device having a field effect transistor formed on a semiconductor layer on an insulator, comprising: a drain electrode wiring formed over a drain region of the field effect transistor; a source electrode wiring formed over a source region of the field effect transistor; first contact plugs connecting the drain region and the drain electrode wiring; and second contact plugs which connect the source region and the source electrode wiring, and the number of which is greater than the first contact plugs.