Asymmetric Substrate Interconnect for Semiconductor Die Alignment
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Solution Overview
Problem
Existing integrated circuit systems face limitations in pitch and interconnect densities due to precision issues in die placement on substrates, leading to fixed contact pitch dimensions for all dies, which restricts finer interconnect capabilities.
Innovation Solution
The approach involves an interconnect pattern on the substrate that references positions on a subset of dies, such as the base die, allowing for smaller contact pad dimensions and pitch on those dies, while accommodating placement variances, thereby enabling finer interconnect densities and pitches.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a fixed contact pitch is used for all dies in the SIP, then manufacturing simplicity is maintained, but interconnect density is limited
Solution Approach 1:
The patent applies different contact pitch dimensions to different dies within the SIP. Specifically, the base die uses a first contact pitch while peripheral dies use a second contact pitch that is a multiple of the first. This local differentiation allows higher interconnect density where needed (base die) while maintaining manufacturing feasibility for peripheral dies.
Solution Approach 2:
The invention introduces asymmetric pitch relationships between different die types. The contact pitch for peripheral dies is intentionally made larger (a multiple) than that of the base die, creating an asymmetric structure that optimizes each die type for its specific function while resolving the contradiction between density and manufacturability.
2Manufacturing precision
If contact pad size is reduced to increase interconnect density, then interconnect capacity increases, but placement tolerance requirements become more stringent
Solution Approach 1:
The patent implements different contact pad size specifications for different die locations. The base die has smaller contact pads enabling higher density, while peripheral dies have proportionally larger pads that accommodate standard placement tolerances. This local quality differentiation resolves the tension between density and tolerance.
Solution Approach 2:
The invention changes the physical parameters (contact pitch and pad size) based on die location and function. By scaling pad sizes and pitches appropriately for each die type, the system achieves high density where critical while maintaining robustness where standard tolerances apply.
3Manufacturing precision
If asymmetric pitch dimensions are implemented for different dies, then interconnect density is optimized, but manufacturing complexity increases
Solution Approach 1:
The patent segments the SIP into distinct functional zones with different pitch requirements. The base die area uses fine pitch while peripheral die areas use coarser pitch. This segmentation allows each zone to be manufactured independently with appropriate process parameters, reducing overall manufacturing complexity despite asymmetric requirements.
Solution Approach 2:
The invention creates a universal manufacturing framework that handles multiple pitch specifications through a single integrated process. The system accommodates both fine-pitch base die and coarse-pitch peripheral dies within one manufacturing flow, achieving multi-functionality that resolves the complexity issue.
Data Source
AI summary
An apparatus includes a first semiconductor die and at least one further semiconductor die. A substrate is attached to the first die and the further die and has an electrical interconnect pattern that interconnects contacts on the first die with respective contacts on the further die. Features of the interconnect pattern have positions on the substrate with smaller tolerances relative to positions of the contacts on the first die than to positions of the contacts on the further die.