Asymmetric Susceptor Hot-Wire Layout for Uniform Substrate Heating
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Solution Overview
Problem
The existing deposition technologies face challenges in maintaining uniform substrate temperature, leading to temperature non-uniformity on the susceptor, which affects the uniformity of thin film deposition, especially in low-temperature processes like plasma-enhanced chemical vapor deposition.
Innovation Solution
A deposition apparatus with a susceptor having asymmetrically arranged hot-wires, where the first hot-wire has a higher heating value per unit area and is biased towards the gate region, and the second hot-wire is arranged in a pattern to cover the entire susceptor body, allowing independent control to maintain uniform temperature distribution.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If a conventional susceptor with uniform heating is used, then the structure is simple, but temperature non-uniformity occurs on the substrate due to heat loss near the gate
Solution Approach 1:
The susceptor implements different heating densities in different regions: the first hot-wire region has a higher heating value per unit area than the second hot-wire region. This local differentiation compensates for heat loss near the gate, achieving uniform substrate temperature across the susceptor surface without requiring a completely complex restructured design.
Solution Approach 2:
The first and second hot-wires are arranged asymmetrically with respect to the second direction orthogonal to the first direction. The first hot-wire is biased toward one side of the first region adjacent to the gate, while the second hot-wire is biased toward one side of the second region far from the gate. This asymmetric arrangement optimizes heat distribution to counteract the non-uniform heat loss pattern caused by the gate position.
2Temperature
If the heating value is increased near the gate to compensate for heat loss, then temperature uniformity is improved, but energy distribution becomes non-uniform
Solution Approach 1:
The first hot-wire is configured with a higher heating value per unit area specifically in the first region adjacent to the gate, while the second hot-wire has a lower heating value per unit area in the second region. This localized energy distribution strategy concentrates heating where needed (near the gate) while reducing energy input in regions that do not require additional heating, achieving both temperature uniformity and reasonable energy distribution.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively reduces temperature gradients and maintains a uniform substrate temperature, enhancing the uniformity of thin film deposition and stability of the deposition process.
Implementation Method 1
a first hot-wire arranged in a first pattern in the first region, and a second hot-wire arranged in a second pattern in the first and second regions
Data Source
AI summary
A deposition apparatus includes a chamber providing an inner space, a gate disposed on one side of the chamber and opening and closing the chamber to allow a substrate to be loaded and unloaded therethrough, and a susceptor including one surface on which the substrate is seated. The susceptor includes a susceptor body including a first region and a second region disposed in a first direction farther away from the gate than the first region, a first hot-wire arranged in a first pattern in the first region, and a second hot-wire arranged in a second pattern in the first and second regions. The first and second hot-wires is asymmetric with respect to a second direction crossing the center of the susceptor body in a plan view and orthogonal to the first direction, and the first and second hot-wires may be controlled independently.