Asymmetric Terminal Opening for Semiconductor Memory Reliability
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Solution Overview
Problem
Semiconductor memory devices, such as USB flash drives, face challenges in ensuring reliable electrical connections due to deviations in terminal positions between the device and the host receptacle, leading to inconsistent contact and potential damage from excessive contact pressure or misalignment.
Innovation Solution
The semiconductor memory device design incorporates a substrate with a conductor layer and insulating layers, where the openings exposing the terminals have specific edge configurations to ensure reliable contact even with deviated terminal positions, reducing the risk of contact with the insulating layer and minimizing material costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If the terminal opening is designed with symmetric edges equidistant from the terminal, then the manufacturing process is simplified, but the reliability of electrical connection deteriorates due to sensitivity to terminal position deviation
Solution Approach 1:
The patent applies asymmetry by designing the terminal opening with unequal distances from the terminal to its edges. Specifically, the distance from the terminal to the first edge is made smaller than the distance to the second edge. This asymmetric configuration creates a tolerance zone that accommodates terminal position deviations, ensuring that the terminal remains properly exposed while preventing contact with the insulating layer, thus improving connection reliability without requiring high manufacturing precision
2Reliability
If the opening is made larger to accommodate terminal position deviation, then the reliability of electrical connection is improved, but the risk of contact with the insulating layer increases
Solution Approach 1:
The patent applies local quality by creating different clearance zones at different locations within the opening. The first edge is positioned closer to the terminal while the second edge is positioned farther away, creating a non-uniform distribution of clearance space. This local differentiation allows the opening to be sufficiently large to accommodate terminal position deviation and improve reliability, while the strategically positioned edges prevent the terminal from contacting the insulating layer at critical locations
Data Source
AI summary
According to one embodiment, a semiconductor memory device includes a conductor layer including a first terminal, and a first insulating layer including a first opening. The first opening includes a first edge and a second edge, a distance between the second edge and the first terminal being larger than a distance between the first edge and the first terminal.