Asymmetric TFT Ring Drain Electrode for Low Voltage Micro LED Driving
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Solution Overview
Problem
Micro light-emitting diode driving circuits face challenges in reducing power consumption, with conventional devices requiring high driving voltages to operate effectively, leading to increased energy usage and potential reliability issues due to stress on the transistors.
Innovation Solution
The design incorporates an asymmetric thin film transistor with a ring-shaped drain electrode and source electrode configuration, along with a micro light-emitting diode featuring a current injection channel separated from its side surface, which reduces the voltage required for operation by shifting the pinch-off point to lower drain-source voltages, thereby lowering power consumption and enhancing reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If conventional driving circuits are used, then light emission function is maintained, but power consumption is high and driving voltage is high
Solution Approach 1:
The patent applies asymmetry by configuring the drain electrode to surround the semiconductor layer while the source electrode is positioned separately, creating an asymmetric field effect transistor structure. This asymmetric configuration modifies the electric field distribution to reduce the pinch-off voltage, enabling operation at lower driving voltages and reduced power consumption while maintaining light emission functionality.
Solution Approach 2:
The patent implements local quality by creating a specific regional structure where the drain electrode surrounds the semiconductor layer in a particular configuration. This localized structural modification around the active region optimizes the electric field distribution precisely where needed, reducing the voltage required for pinch-off without affecting other parts of the device, thereby lowering overall power consumption.
2Reliability
If high driving voltage is applied, then effective light emission is achieved, but stress on transistor increases and reliability decreases
Solution Approach 1:
The asymmetric drain electrode configuration surrounding the semiconductor layer creates a more uniform and optimized electric field distribution, reducing voltage stress concentrations on the transistor. This reduces the overall driving voltage needed while maintaining effective light emission, thereby improving transistor reliability by minimizing stress.
3Use of energy by moving object
If conventional transistor configuration is used, then manufacturing is straightforward, but power consumption cannot be reduced
Solution Approach 1:
The patent modifies the conventional symmetric transistor structure by making the drain electrode surround the semiconductor layer while the source electrode remains separate. This asymmetric configuration is integrated into the existing manufacturing process flow, adding minimal complexity to the fabrication steps while achieving significant power consumption reduction through optimized electric field control.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration allows for a low power micro light-emitting diode display device and driving circuit that operates with voltages less than 8V, reducing power consumption and stress on the transistor, while maintaining effective light emission, thus addressing the inefficiencies of conventional systems.
Implementation Method 1
shifting the pinch-off point to lower drain-source voltages
Implementation Method 2
The active layer is present on and joined with the first type semiconductor layer. The second type semiconductor layer present on and joined with the active layer.
Data Source
AI summary
A micro light-emitting diode display device including a driving transistor and a micro light-emitting diode is provided. The driving transistor includes a substrate, a bottom gate, a gate insulator, a semiconductor layer, an etch stopper, a drain electrode, a source electrode, and an insulating layer. The drain electrode is ring-shaped and a contact portion between the drain electrode and the semiconductor layer surrounds the semiconductor layer. The source electrode is in contact with the semiconductor layer and is enclosed by the drain electrode. The insulating layer has a via therein to expose a portion of the source electrode. The micro light-emitting diode is electrically connected to the source electrode. The micro light-emitting diode includes a current injection channel present in the micro-light emitting diode. The current injection channel is separated from a side surface of the micro light-emitting diode.