Asymmetric Wavelength Multiplexing Chip Inverse Design
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Solution Overview
Problem
Traditional wavelength multiplexing and demultiplexing chips are limited to the C-band and struggle to cover the O+E+S+L bands due to non-uniform transmission loss in optical fibers, particularly high loss in the E band, and are hindered by dispersion issues in silicon-based photonics integration technology.
Innovation Solution
An asymmetric wavelength multiplexing and demultiplexing chip based on inverse design and silicon-based photonics integration technology, comprising a first-level asymmetric unit and multiple second-level symmetric units, which allows for fine adjustment of output characteristics across all bands, improving signal transmission density and fiber utilization.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If traditional wavelength multiplexing and demultiplexing chips are used, then the device structure is simple, but the wavelength coverage is limited to C-band and cannot cover O+E+S+L bands
Solution Approach 1:
The chip is divided into multiple functional regions including a first functional region with asymmetric waveguide structures and second functional regions with symmetric waveguide structures. Each region handles specific wavelength bands, enabling comprehensive O+E+S+C+L band coverage while maintaining modular design simplicity.
Solution Approach 2:
The patent employs asymmetric waveguide structures in the first functional region to achieve non-uniform transmittance characteristics for different wavelength bands. This asymmetric design enables the device to compensate for non-uniform transmission loss in optical fibers across different bands, particularly addressing the high loss in E band.
2Adaptability or versatility
If thin-film asymmetric wavelength multiplexing and demultiplexing devices are used, then the device can achieve asymmetric wavelength control, but the device volume is large and stability is poor
Solution Approach 1:
The patent replaces traditional thin-film mechanical structures with silicon-based photonic integrated circuit structures. This substitution enables the device to be fabricated using standard CMOS semiconductor manufacturing processes, significantly improving stability, reducing volume, and enhancing reliability while maintaining asymmetric wavelength control capabilities.
3Volume of moving object
If silicon-based photonics integration technology is used, then the device size is compact and manufacturing cost is low, but dispersion problem limits the performance
Solution Approach 1:
The patent applies different waveguide structure designs to different functional regions within the silicon-based photonic integrated circuit. The first functional region uses asymmetric waveguide structures optimized for specific dispersion characteristics, while second functional regions use symmetric structures. This local optimization enables the compact silicon-based device to achieve high manufacturing precision and overcome dispersion limitations.
4Ease of manufacture
If traditional forward design method is used, then the design process is straightforward, but the device cannot achieve ultra-small large-scale optoelectronic devices
Solution Approach 1:
The patent employs inverse design methodology where the desired optical performance characteristics (non-uniform transmittance for all-band WDM) are specified first, and then computational algorithms automatically generate the corresponding waveguide structures. This inverted design approach enables the creation of ultra-compact structures that achieve precise optical performance, overcoming the volume limitations of traditional forward design while maintaining manufacturability through standard fabrication processes.
Data Source
AI summary
The present disclosure discloses an asymmetric wavelength multiplexing and demultiplexing chip based on inverse design, which belongs to the technical field of optical components, systems or instrument. The chip includes the first-level asymmetric wavelength multiplexing and demultiplexing unit and the second-level symmetric wavelength multiplexing and demultiplexing unit, which is constructed by silicon based photonics integration technology, includes a substrate, a bottom cladding layer, a core layer and a top cladding layer sequentially stacked from bottom to top. The functional regions inside the first-level unit and the second-level unit are designed based on the inverse design algorithms, and are composed of subunits on the submicron or nanometer scale. The chip provided is capable of covering the all-band in the optical communication system, and implementing the non-uniform wavelength division of the energy across all-band; and has an ultra-compact structure, adjustable wavelength intervals, non-uniform transmittance of each wavelength, low channel interval crosstalk.


