Asymmetrical Circuit Substrate Grooves for Burr-Free Separation
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Solution Overview
Problem
Existing circuit substrate manufacturing methods face challenges in achieving a balance between withstanding high-voltage and downsizing, with previous designs resulting in large dimensions and difficulties in removing metallic burrs, which can lead to short-circuits.
Innovation Solution
The proposed solution involves a circuit substrate with asymmetrical side surfaces, where the first side surface is shorter than the second side surface, and a manufacturing process that includes forming shallower first grooves on the top surface and deeper third grooves on the bottom surface to define circuit units, reducing metallic burr generation and allowing for more efficient separation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If symmetrical grooves are formed on both top and bottom surfaces to separate circuit units, then separation is achieved, but metallic burrs are generated that can cause short-circuits
Solution Approach 1:
The patent applies asymmetry by forming grooves of different depths on the top and bottom surfaces of the substrate. The first groove on the top surface and the third groove on the bottom surface have different depths, creating an asymmetrical cutting pattern that prevents the generation of metallic burrs while maintaining effective separation of circuit units. This asymmetrical groove configuration eliminates the harmful burr generation problem that occurs with symmetrical groove formation.
2Productivity
If substrate thickness is reduced to enable separation, then manufacturing efficiency improves, but voltage withstand capability deteriorates
Solution Approach 1:
The patent transitions from a single-dimensional thickness reduction approach to a multi-dimensional solution by forming grooves at different depths on both top and bottom surfaces. Instead of simply thinning the substrate uniformly, the invention creates localized removal of material through asymmetrical grooves, achieving separation while preserving the overall substrate thickness needed for voltage withstand capability. This dimensional approach allows simultaneous achievement of manufacturing efficiency and electrical reliability.
3Reliability
If deeper grooves are formed to ensure complete separation, then separation reliability improves, but metallic burr generation increases
Solution Approach 1:
The patent segments the groove formation process into multiple stages with different depths. Instead of forming a single deep groove that causes burrs, the invention creates a first groove at a first depth and a second groove at a second depth, effectively dividing the material removal process. This segmented approach ensures complete separation of circuit units while avoiding the generation of metallic burrs that would result from a single deep cutting operation.
Data Source
AI summary
A semiconductor device that includes a metal substrate including a top surface, a bottom surface and four side surfaces, a conductive pattern insulated from the metal substrate, and a semiconductor element mounted on and electrically connected to the conductive pattern. The top surface is insulated. Each of the side surfaces of the metal substrate includes a first inclining side surface and a second inclining side surface so as to form a convex shape protruding outwardly between the top surface and the bottom surface of the metal substrate, and the first inclining side surfaces of a pair of two opposing side surfaces are smaller than corresponding first inclining side surfaces of another pair of two opposing side surfaces.