Asymmetrical Dummy Pattern Filling for Semiconductor Cell Regions
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Solution Overview
Problem
The symmetrical arrangement of patterns in semiconductor devices with FinFET technology leads to excessive empty regions between adjacent cell regions, affecting the device profile and efficiency.
Innovation Solution
The semiconductor device features asymmetrical patterns on the cell region, with the pattern closest to one edge being different from the pattern closest to the opposite edge, and includes a method of filling dummy patterns with specific dimensions to optimize pattern arrangement and reduce empty spaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If symmetrical pattern arrangement is used in cell regions, then manufacturing simplicity is maintained, but excessive empty regions are created between adjacent cell regions
Solution Approach 1:
The patent applies asymmetry by configuring different patterns at the first and second edges of the cell region. Specifically, the first edge has a first pattern while the second edge has a second pattern that is different from the first pattern. This asymmetric arrangement eliminates excessive empty regions between adjacent cell regions while maintaining manufacturability through defined pattern specifications.
Solution Approach 2:
The patent implements local quality by making the pattern configuration at the first edge different from the pattern configuration at the second edge. The first pattern and second pattern have different characteristics tailored to their respective positions, allowing optimization of space utilization at each edge while maintaining overall device functionality.
2Shape
If symmetrical pattern arrangement is used, then device symmetry is maintained, but device profile and efficiency are degraded due to excessive empty regions
Solution Approach 1:
The patent deliberately breaks device symmetry by configuring different patterns at opposite edges of the cell region. The first pattern at the first edge differs from the second pattern at the second edge, creating an asymmetric device profile that eliminates excessive empty regions and improves space utilization efficiency.
Solution Approach 2:
The patent changes the pattern parameters at different edges of the cell region. By varying the pattern type, size, or configuration between the first edge and second edge, the device achieves improved profile and efficiency while maintaining controlled manufacturing through defined parameter specifications.
Data Source
AI summary
A method for filling patterns includes the steps of: providing a substrate having a cell region defined thereon; forming main patterns on the substrate and within the cell region; and filling first dummy patterns adjacent to the main patterns. Preferably, each of the first dummy patterns comprises a first length along X-direction between 2 μm to 5 μm and a second length along Y-direction between 3 μm to 5 μm.