Asymmetrical Parallel-Combining RF Power Amplifier

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Solution Overview

Problem

CMOS RF power amplifiers face challenges with poor linearity, voltage and current stress reliability, and high power consumption, especially in achieving high efficiency and low distortion at power back-off conditions for WiFi standards like IEEE 802.11ac, which existing topologies like cascode, Doherty, and parallel-combining transformers struggle to address effectively.

Innovation Solution

The implementation of an asymmetrical Parallel-Combining (APC) Cascode topology power amplifier, which combines low-power and high-power amplifiers with dynamically controlled asymmetrical parallel-combining transformers, reducing current consumption and AM-AM/AM-PM distortions without requiring digital pre-distortion or tunable elements, and using static or dynamic biases for process, voltage, and temperature compensation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Loss of energy

If switching mode power amplifiers or Doherty topology are used to achieve high PAE in deep PBO region, then power efficiency is improved, but complexity increases due to requiring DPD engine, phase shifters and programmable higher-Q resonant tank circuits

Engineering Contradiction:
Improvepower efficiencyVSAvoidcomplexity
Core Design Contradiction:
Loss of energyVSDevice complexity

Solution Approach 1:

The power amplifier is segmented into a main PA and a auxiliary PA, each operating in different regions. The main PA handles high-power operations while the auxiliary PA supplements during deep power back-off conditions. This segmentation allows each amplifier to be optimized for its specific operating region, achieving high efficiency across the entire power range without requiring complex DPD engines or programmable resonant tank circuits.

Inventive Principle:
Principle #1Segmentation

2Manufacturing precision

If parallel-combining transformer (PCT), parallel-cascoded configuration (PCC) with active feedback linearizer, or multigate transistor (MGTR) techniques are used to improve linearity, then EVM performance is improved, but power consumption increases when achieving targeted EVM performance of -35 dB

Engineering Contradiction:
ImprovelinearityVSAvoidpower consumption
Core Design Contradiction:
Manufacturing precisionVSUse of energy by moving object

Solution Approach 1:

The invention employs dynamic bias control where the bias voltages of the main PA and auxiliary PA are dynamically adjusted based on the operating conditions. This dynamic adjustment allows the amplifiers to maintain optimal linearity and efficiency at different power levels, achieving the targeted EVM performance without excessive power consumption that would result from static high-linearity configurations.

Inventive Principle:
Principle #15Dynamics

3Reliability

If cascode transistor configuration is used to reduce voltage stress over CMOS transistors, then reliability is improved, but current density in transistors increases

Engineering Contradiction:
ImprovereliabilityVSAvoidcurrent density
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The power amplifier is segmented into a main PA and a auxiliary PA, each handling different power levels. This segmentation distributes the current load across two amplifier paths, reducing the current density in individual transistors while maintaining the voltage stress protection benefits of the cascode configuration. The auxiliary PA supplements the main PA during deep power back-off, further distributing the operational stress.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS10615751B2Asymmetrical parallel-combining (APC) technique for RF power amplifier
Publication Date: 2020.04.07 DSP GROUP
  • US10615751B2 patent drawing
  • US10615751B2 patent drawing
  • US10615751B2 patent drawing

AI summary

An integrated circuit RF power amplifier that includes a substrate; a low power (LP) amplifier; a high-power (HP) amplifier; and an asymmetrical parallel-combining transformer. The substrate is configured to supports the LP amplifier, the HP amplifier and the asymmetrical parallel-combining transformer. The LP amplifier is configured to amplify a LP RF input signal to provide a LP amplified signal. The HP amplifier is configured to amplify a HP RF input signal to provide a HP amplified signal. The HP amplified signal has maximal intensity that exceeds a maximal intensity of the LP amplified signal. The wherein the asymmetrical parallel-combining transformer may include (a) a HP primary winding that is constructed and arranged to receive the HP amplified signal; (b) LP primary windings that are constructed and arranged to receive the LP amplified signal; and (c) secondary windings that are magnetically coupled to the HP primary winding and to the LP primary windings, and are constructed and arranged to output a output signal.