Asymmetrical Rectifying Device for Ultrahigh Frequency Operation

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Solution Overview

Problem

Tunnel diodes face limitations in application diversity due to insufficient performance and fabrication constraints, particularly in operating at ultrahigh frequencies, which are required by increasing data volumes and communication frequencies.

Innovation Solution

A rectifying device with an asymmetrical structure is developed, featuring a flat first electrode and a second electrode formed as a nanotube or nanowire with a high aspect ratio, which increases current flow through field effect tunneling and work function differences, allowing for enhanced performance at ultrahigh frequencies.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a conventional tunnel diode structure is used, then the device can be manufactured with existing fabrication processes, but the performance is insufficient for ultrahigh frequency operations

Engineering Contradiction:
ImproveperformanceVSAvoidfabrication constraints
Core Design Contradiction:
ReliabilityVSEase of manufacture

Solution Approach 1:

The patent applies asymmetry by forming the second electrode with a nanotube or nanowire structure that has a significantly different shape from the flat first electrode, creating an asymmetrical structure in the longitudinal direction. This asymmetrical configuration increases current flow and enables ultrahigh frequency operation while maintaining compatibility with existing fabrication processes through sequential deposition and patterning steps

Inventive Principle:
Principle #4Asymmetry

2Speed

If the tunnel diode operates at higher frequencies, then it can meet increasing data volume and communication frequency requirements, but the current performance is insufficient due to fabrication and driving mechanism limits

Engineering Contradiction:
Improveoperating frequencyVSAvoidperformance
Core Design Contradiction:
SpeedVSReliability

Solution Approach 1:

The patent changes physical parameters by introducing an asymmetrical electrode structure with different shapes in the longitudinal direction, which modifies the electric field distribution and tunneling characteristics. This parameter change enables the device to operate at ultrahigh frequencies by increasing current flow through the asymmetrical configuration, directly addressing the frequency and performance requirements

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The asymmetrical structure enables increased current flow and improved performance at ultrahigh frequencies, addressing the limitations of existing tunnel diodes by applying a strong electric field to lower the tunneling barrier and supporting operation in high-frequency applications.

Implementation Method 1

increasing current flow through field effect tunneling and work function differences, allowing for enhanced performance at ultrahigh frequencies

Methodology Applied
Scientific EffectField effect tunneling: Electron Avalanche

Implementation Method 2

a function of the tunnel diode is based on an interband tunneling of charge carriers

Methodology Applied
Scientific EffectInterband tunneling: Electron Avalanche

Implementation Method 3

increasing current flow through field effect tunneling and work function differences

Methodology Applied
Scientific EffectWork function difference:

Data Source

PatentUS9425329B2Rectifying device and method for manufacturing the same
Publication Date: 2016.08.23 DAEGU GYEONGBUK INSTITUTE OF SCIENCE AND TECHNOLOGY
  • US9425329B2 patent drawing
  • US9425329B2 patent drawing
  • US9425329B2 patent drawing

AI summary

Disclosed herein are a rectifying device and a method of fabricating the same. The rectifying device includes a first electrode formed in a flat shape, an insulating layer deposited on the first electrode and a second electrode formed on a preset region of the insulating layer in a nanaopillar shape in a longitudinal direction to be asymmetrical to the first electrode, thereby increasing current flow.