Atmosphere-Modulation Layer for Strain Retention in Semiconductor Annealing
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Solution Overview
Problem
The challenge in forming semiconductor devices is the limited thermal budget, which necessitates high-temperature thermal treatments for short durations, leading to poor performance and uniformity due to strain relaxation and thick equivalent oxide thickness (CET), especially for scaled-down dimensions and materials like Ge and III-V compounds.
Innovation Solution
The implementation of an atmosphere-modulation layer during high-pressure annealing with a low-thermal budget, controlling oxygen entry to improve interfacial layer uniformity and strain retention, allowing for longer annealing times without strain relaxation, and integrating gate dielectric and interfacial layer passivation in a single step.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If high-temperature thermal treatment is performed, then reliability of the semiconductor device is improved, but the processing time must be shortened due to limited thermal budget, leading to poor device performance
Solution Approach 1:
The patent applies rapid thermal annealing (RTA) to change the thermal processing parameters, using high temperature for very short durations (seconds to minutes) instead of conventional slow annealing. This parameter change enables achieving the desired interface quality and device reliability while maintaining a limited thermal budget and short processing time.
Solution Approach 2:
The patent employs periodic or pulsed thermal treatment through RTA, where heating is applied in rapid pulses rather than continuous heating. This periodic thermal action allows the system to achieve the necessary thermal effects for interface passivation and material activation while keeping the overall thermal budget low and processing time short.
2Temperature
If high-temperature thermal treatment is performed for a short time, then thermal budget is maintained, but strain relaxation occurs and equivalent oxide thickness increases, leading to poor device performance
Solution Approach 1:
The patent changes the thermal processing parameters by using rapid thermal annealing with controlled temperature profiles. By adjusting the heating rate, peak temperature, and duration, the process achieves interface passivation and material activation while maintaining strain in the semiconductor layer and preventing excessive oxide growth, thus preserving manufacturing precision.
Solution Approach 2:
The patent performs preliminary formation of the interfacial layer before the rapid thermal annealing process. This preliminary action ensures that the interface is properly prepared, and subsequent RTA treatment enhances the interface quality without causing strain relaxation or excessive oxide thickening, as the interfacial layer is already in place to guide the thermal processing outcome.
3Ease of manufacture
If conventional thermal treatment is used, then processing is simpler, but device performance and uniformity are poor due to strain relaxation and thick CET
Solution Approach 1:
The patent transforms the conventional slow thermal annealing process into rapid thermal annealing by changing the key parameter of heating rate. This parameter change maintains the relative simplicity of the manufacturing process (single-step annealing) while dramatically improving device performance and uniformity through better strain retention and controlled oxide thickness.
Solution Approach 2:
The patent replaces the conventional gradual thermal diffusion mechanism with rapid thermal heating and cooling cycles. This substitution changes the fundamental mechanism of thermal processing from slow diffusion-based annealing to rapid thermal relaxation, achieving better interface quality and strain retention while maintaining process simplicity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the uniformity and reliability of semiconductor devices by maintaining low thermal budgets, reducing strain relaxation, and improving CET, while being suitable for high-mobility channel materials like Ge and III-V compounds.
Implementation Method 1
An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer
Implementation Method 2
controlling oxygen entry to improve interfacial layer uniformity
Data Source
AI summary
Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer.