Atmosphere Replacement Cover for Semiconductor Substrate Gas Control
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Solution Overview
Problem
The existing atmosphere replacement systems for substrates during transportation require large amounts of gas, leading to increased costs and time, and can cause oxygen deficiency if nitrogen leaks, especially in systems with multiple FOUP connections, which complicates maintaining a clean and inert environment for semiconductor production.
Innovation Solution
An atmosphere replacement apparatus with a cover that supplies a gas different from the surrounding atmosphere, using a gas supply means to replace the atmosphere on the substrate surface efficiently, reducing gas usage and minimizing leaks, and incorporating a cover moving mechanism to avoid interference with the transport arm and substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If nitrogen gas is used to replace atmosphere in the wafer transport chamber, then substrate surface protection from oxidation and moisture is improved, but gas consumption increases and replacement time is extended
Solution Approach 1:
The patent divides the atmosphere replacement function into two separate locations: the FOUP (where nitrogen is already present) and the process chamber (where vacuum/inert atmosphere is needed). The transport chamber maintains clean air atmosphere, eliminating the need for atmosphere replacement during transport. This segmentation allows each component to maintain its required atmosphere without requiring gas replacement operations.
Solution Approach 2:
The patent extracts the atmosphere replacement function from the transport chamber by providing separate atmosphere control at the FOUP and process chamber ends. The transport chamber only needs to maintain clean air for particle prevention, while the actual atmosphere transition occurs at the interface points, removing the burden of replacing atmosphere in the entire transport volume.
2Reliability
If nitrogen gas is used to replace atmosphere in the wafer transport chamber, then substrate surface protection from oxidation and moisture is improved, but gas cost increases
Solution Approach 1:
The patent segments the atmosphere control function so that nitrogen is only used where absolutely necessary (in the FOUP for storage and at the process chamber for processing). The transport chamber uses clean air, eliminating unnecessary nitrogen consumption in the transport volume while still protecting the substrate through the segmented atmosphere control at critical interfaces.
Solution Approach 2:
The patent applies different atmosphere qualities to different locations: clean air in the transport chamber (sufficient for particle prevention), nitrogen in the FOUP (for long-term storage protection), and vacuum/inert atmosphere in the process chamber (for processing). This local quality approach ensures nitrogen is used only where required for substrate protection, minimizing overall consumption while maintaining reliability.
3Productivity
If the wafer transport chamber volume is increased to connect multiple FOUPs, then transport efficiency is improved, but atmosphere replacement difficulty increases
Solution Approach 1:
The patent segments the atmosphere control function to different locations (FOUP, transport chamber, process chamber) so that increasing transport chamber volume to connect multiple FOUPs does not complicate atmosphere replacement. Each segment maintains its own atmosphere control, allowing the transport chamber to be expanded for efficiency without inheriting the complexity of atmosphere replacement in large volumes.
Data Source
AI summary
The present invention provides an atmosphere replacement apparatus capable of replacing the atmosphere on the surface of a wafer with a small amount of gas. The apparatus is configured to have a cover capable of facing and covering the wafer to be transported, and a gas supply means that supplies gas having properties different from a surrounding atmosphere from the cover, and replaces the atmosphere on the surface of the wafer by the gas.