Atmospheric Pressure Atomic Layer Deposition for High Aspect Ratio Step Coverage
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Solution Overview
Problem
Conventional semiconductor manufacturing techniques, such as chemical vapor deposition, face limitations in achieving good step coverage for features smaller than 0.2 μm and are slow, making them unsuitable for high volume manufacturing and advanced integrated circuit production.
Innovation Solution
The method involves using atomic layer deposition under atmospheric conditions, where substrates are moved on a moving member coupled with multiple gas distribution members to form films, maintaining atmospheric pressure and achieving deposition rates greater than 1 nanometer per minute.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional chemical vapor deposition techniques are used, then films can be formed with insulation, semiconductor, and conductor materials, but step coverage is poor for features smaller than 0.2 μm with aspect ratios of 10 or more
Solution Approach 1:
The patent changes the fundamental parameters of the deposition process by transitioning from plasma-enhanced chemical vapor deposition to atomic layer deposition at atmospheric pressure. This parameter change enables excellent step coverage on high aspect ratio features (greater than 10:1) while maintaining compatibility with conventional semiconductor manufacturing processes
2Manufacturing precision
If atomic layer deposition techniques are used to achieve good step coverage, then deposition quality improves, but deposition rate is slow and implementation for high volume manufacturing becomes difficult
Solution Approach 1:
The patent performs a parameter change by conducting atomic layer deposition at atmospheric pressure rather than in vacuum conditions. This enables the use of higher precursor gas flow rates and eliminates vacuum pumping time, increasing deposition rates to greater than 1 nanometer per minute while preserving the excellent step coverage characteristics of ALD
Solution Approach 2:
The patent implements continuous processing by eliminating vacuum cycles between deposition steps. The atmospheric pressure ALD system allows for continuous substrate processing and higher throughput, making the technique suitable for high volume manufacturing while maintaining high deposition rates
3Manufacturing precision
If vacuum conditions are used for conventional atomic layer deposition, then film quality is maintained, but process time increases and high volume manufacturing becomes difficult
Solution Approach 1:
The patent changes the pressure parameter from vacuum to atmospheric conditions, eliminating the need for vacuum pumping and chamber cycling. This reduces process time significantly while maintaining film quality through precise control of precursor dosing and reaction conditions in the atmospheric pressure environment
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances device yields, integrates well with conventional processes, and supports high volume manufacturing, particularly for design rules of 0.1 microns and less, without requiring substantial modifications to existing equipment.
Implementation Method 1
forming a film using atomic layer deposition
Implementation Method 2
depositing one or more films of materials using atomic layer deposition under atmospheric conditions
Data Source
AI summary
A method for atomic layer deposition. The method includes providing a substrate having a surface region and exposing the surface region of the substrate to an atmospheric pressure. The method also maintains at least the substrate at about the atmospheric pressure and forms a film overlying the surface region using atomic layer deposition, while the substrate is maintained at about atmospheric pressure. Preferably, the film is grown at a rate of greater than about 1 nanometer per minute.