Atmospheric Plasma Processing for Semiconductor Wafers

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Solution Overview

Problem

Conventional semiconductor fabrication processes require low-pressure or vacuum environments for plasma processing, which increases manufacturing costs and time due to the need for expensive vacuum equipment and time-consuming depressurization and re-pressurization of process chambers.

Innovation Solution

Atmospheric plasma processing using radio frequency (RF) generators to create plasma sources that are scanned across microelectronic workpieces, such as semiconductor wafers, within a process chamber at pressures between 350 to 4000 Torr, allowing for linear and angular movement of the plasma sources or the workpieces to enhance processing efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If low-pressure or vacuum environment is used for plasma processing, then plasma processing quality is improved, but manufacturing cost and cycle time increase due to expensive vacuum equipment and time-consuming depressurization/re-pressurization

Engineering Contradiction:

Improveplasma processing qualityVSAvoidmanufacturing cycle time

Core Design Contradiction:

Manufacturing precisionVSProductivity

Solution Approach 1:

The patent changes the pressure parameter from low-pressure/vacuum to atmospheric pressure (350-4000 Torr), enabling plasma processing without vacuum equipment. This eliminates the need for depressurization and re-pressurization cycles, significantly reducing manufacturing cycle time while maintaining plasma processing capability through atmospheric pressure plasma sources

Inventive Principle:

Principle #35Parameter changes

Solution Approach 2:

The patent extracts and removes the vacuum system from the plasma processing equipment, replacing it with atmospheric pressure plasma sources. This elimination of the vacuum subsystem reduces equipment cost, simplifies the system, and removes the time-consuming vacuum cycling steps from the manufacturing process

Inventive Principle:

Principle #2Taking out (Extraction)

2Manufacturing precision

If low-pressure or vacuum environment is used for plasma processing, then plasma processing quality is improved, but equipment cost increases due to expensive vacuum equipment

Engineering Contradiction:

Improveplasma processing qualityVSAvoidequipment cost

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

Inventive Principle:

Principle #2Taking out (Extraction)

Solution Approach 2:

The patent changes the pressure parameter from low-pressure/vacuum to atmospheric pressure (350-4000 Torr), enabling plasma processing without vacuum equipment. This eliminates the need for expensive vacuum systems while maintaining plasma processing capability through atmospheric pressure plasma sources

Inventive Principle:

Principle #35Parameter changes

3Manufacturing precision

If plasma sources are scanned across microelectronic workpiece, then processing uniformity and efficiency are improved, but system complexity increases

Engineering Contradiction:

Improveprocessing uniformityVSAvoidsystem complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent introduces dynamic scanning motion of the plasma source across the workpiece surface, replacing static plasma processing. This dynamic approach enables uniform plasma exposure across the entire workpiece area while maintaining system simplicity through straightforward mechanical scanning mechanisms

Inventive Principle:

Principle #15Dynamics

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces costs and cycle times by eliminating the need for vacuum equipment and allows for combined processing steps on a single platform, improving processing efficiency and uniformity while reducing variability and wait times associated with depressurization and re-pressurization.

Implementation Method 1

a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber

Methodology Applied

Scientific EffectRadio frequency plasma generation: Plasma

Data Source

PatentUS11049700B2Atmospheric plasma processing systems and methods for manufacture of microelectronic workpieces

Publication Date: 2021.06.29 TOKYO ELECTRON LTD

AI summary

Systems and related methods are disclosed for atmospheric plasma processing of microelectronic workpieces, such as semiconductor wafers. For disclosed embodiments, a radio frequency (RF) generator generates an RF signal that is distributed to one or more plasma sources within a process chamber. The process chamber has an atmospheric pressure between 350 to 4000 Torr. The plasma sources are then scanned across a microelectronic workpiece to apply plasma gasses generated by the plasma generators to the microelectronic workpiece. The plasma sources can be individually scanned and/or combined in arrays for scanning across the microelectronic workpiece. Linear and/or angular movement can be applied to the plasma sources and/or the microelectronic workpiece to provide the scanning operation. Various implementations are disclosed.