Atmospheric-pressure plasma processing apparatus and method
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Solution Overview
Problem
Current atmospheric-pressure plasma processing technologies face limitations in achieving stable, large-area discharges with controlled neutral gas temperature, leading to slow processing and heat-related issues when treating substrates, especially for large or high-volume materials like plastics and textiles.
Innovation Solution
The development of an atmospheric-pressure plasma processing apparatus featuring water-cooled electrodes and a gas manifold that allows plasma gas to flow between parallel planar surfaces, enabling a stable, non-thermal discharge with controlled neutral gas temperature and unobstructed path for active species to reach the substrate, reducing electrical influence and heat exposure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of stationary object
If atmospheric-pressure plasma is used for large-area processing, then processing area is improved, but neutral gas temperature becomes uncontrolled and processing speed decreases
Solution Approach 1:
The patent changes the temperature parameter by introducing water-cooled electrodes that actively control the neutral gas temperature. This allows the plasma to operate at lower temperatures (maintaining non-thermal conditions) while still achieving atmospheric pressure and large-area coverage, thereby resolving the contradiction between processing area and processing speed.
2Area of stationary object
If atmospheric-pressure plasma is used for large-area processing, then processing area is improved, but neutral gas temperature control is lost
Solution Approach 1:
The patent actively controls the temperature parameter through water-cooled electrodes, transforming the uncontrolled high-temperature atmospheric plasma into a controlled non-thermal plasma. This allows large-area processing while maintaining temperature control, resolving the contradiction between processing area and temperature control.
3Quantity of substance
If substrate is placed inside plasma for in-situ processing, then active species generation is improved, but substrate exposure to electrical influence and heat increases
Solution Approach 1:
The patent extracts the substrate from the plasma discharge region, positioning it outside the electrical field while maintaining proximity to the plasma source. This allows active species to reach the substrate without the substrate being exposed to harmful electrical influence and heat, resolving the contradiction between active species generation and harmful factor exposure.
4Quantity of substance
If vacuum-based plasma is used for surface treatment, then active species generation is improved, but processing complexity and cost increase
Solution Approach 1:
The patent changes the pressure parameter from vacuum to atmospheric pressure, eliminating the need for complex vacuum systems while maintaining active species generation through the use of water-cooled electrodes and controlled discharge geometry. This resolves the contradiction between active species generation and processing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This solution enables faster processing speeds, efficient heat management, and the ability to treat heat-sensitive substrates by maintaining a lower neutral gas temperature and positioning the substrate outside the electrical influence of the plasma, resulting in accelerated plasma processing rates and improved substrate treatment outcomes.
Implementation Method 1
water-cooled electrodes and a gas manifold that allows plasma gas to flow between parallel planar surfaces, enabling a stable, non-thermal discharge with controlled neutral gas temperature
Implementation Method 2
an RF power supply in electrical connection with the at least one first electrode; whereby a plasma is formed in the at least one plasma region
Data Source
AI summary
A plasma processing apparatus including powered electrodes having elongated planar surfaces; grounded electrodes having elongated planar surfaces parallel to and coextensive with the elongated surfaces of the powered electrodes, and spaced-apart a chosen distance therefrom, forming plasma regions, is described. RF power is provided to the at least one powered electrode, both powered and grounded electrodes may be cooled, and a plasma gas is flowed through the plasma regions at atmospheric pressure; whereby a plasma is formed in the plasma regions. The material to be processed may be moved into close proximity to the exit of the plasma gas from the plasma regions perpendicular to the gas flow, and perpendicular to the elongated electrode dimensions, whereby excited species generated in the plasma exit the plasma regions and impinge unimpeded onto the material.