Atomic Layer Etch Cycles With Millisecond Radical-Ion Timing
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Solution Overview
Problem
Atomic layer etching processes are time-consuming due to the long duration of each cycle, which is dependent on the period of modifying and removing a monolayer, limiting the overall etching efficiency.
Innovation Solution
A method involving cycles of exposing the etch layer to neutral radicals for absorption and bombardment ions, with controlled time durations between 10 ms and 600 ms, to enhance etch layer modification and removal, respectively, utilizing high flux and energy to reduce cycle time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If atomic layer etching is performed with traditional cycle durations, then high selectivity is achieved, but etching speed is slow and productivity is low
Solution Approach 1:
The patent changes the temporal parameters of the etching cycle by reducing the duration of both the neutral radical exposure step and the ion bombardment step to between 10-600 milliseconds each. This parameter change enables faster cycle completion while maintaining the sequential modification-removal mechanism that provides high selectivity, thereby resolving the contradiction between selectivity and etching speed
Solution Approach 2:
The patent employs periodic cyclic action with optimized timing, where each cycle consists of periodic exposure to neutral radicals followed by periodic ion bombardment. By optimizing the period duration of each step to 10-600 ms, the process achieves both high selectivity through self-limiting monolayer removal and high productivity through rapid cycle repetition, overcoming the traditional trade-off
2Productivity
If cycle time is reduced to increase etching speed, then productivity improves, but control over monolayer modification and removal becomes difficult
Solution Approach 1:
The patent applies preliminary action by first exposing the etch layer to neutral radicals for a controlled period (10-600 ms) to pre-modify the surface and form a modified monolayer before ion bombardment. This preliminary modification step ensures precise monolayer control is achieved before the removal step, even at reduced cycle times, thereby maintaining manufacturing precision while improving productivity
Solution Approach 2:
The patent introduces dynamic control of the etching process by independently optimizing the duration of each step (neutral radical exposure and ion bombardment) within the 10-600 ms range. This dynamic adjustment of timing parameters allows the process to maintain precise monolayer control while achieving faster overall cycle times, resolving the contradiction between speed and precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly increases etch speeds by more than ten times compared to prior art, achieving faster etching with high selectivity and uniformity across various layers, including silicon and metal-containing layers.
Implementation Method 1
exposing the etch layer to neutral radicals for a time between 10 ms and 600 ms, wherein the neutral radicals are absorbed into the etch layer to form a modified part of the etch layer
Implementation Method 2
exposing the etch layer to bombardment ions for a time between 10 ms and 600 ms, wherein the bombardment ions remove the modified part of the etch layer
Data Source
AI summary
A method for etching an etch layer is provided. The method comprises a plurality of cycles, wherein each cycle, comprises exposing the etch layer to neutral radicals for a time between 10 ms and 600 ms, wherein the neutral radicals are absorbed into the etch layer to form a modified part of the etch layer and exposing the etch layer to bombardment ions for a time between 10 ms and 600 ms, wherein the bombardment ions remove the modified part of the etch layer.