Atomic-Scale Uniform Grid for Moving Semiconductor Boundaries

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Solution Overview

Problem

Current methods for modeling temporal processes in CAD and EDA systems, such as semiconductor fabrication, face challenges with irregular grids near boundaries, leading to increased computing time and difficulty in parallelization, especially for moving-boundary problems like silicon-silicon oxide interfaces during oxide growth.

Innovation Solution

A system that imposes a uniform grid of nodes with spacing less than the quantum separation distance in silicon, allowing for efficient simulation of temporal processes by iterating through time steps and representing boundary movement by changing particle types assigned to nodes, applicable to both partial differential equations and discrete time probability equations.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If an irregular grid of nodes is used to fit curved boundaries, then the accuracy of boundary representation is improved, but the computing time increases and parallelization becomes difficult

Engineering Contradiction:
Improveboundary representation accuracyVSAvoidcomputing speed
Core Design Contradiction:
Measurement precisionVSProductivity

Solution Approach 1:

The patent changes the grid structure from irregular to regular/uniform, transforming the problem from geometric fitting to numerical approximation. This parameter change allows the use of standard numerical methods on structured grids while maintaining sufficient accuracy through appropriate grid spacing and boundary condition handling.

Inventive Principle:
Principle #35Parameter changes

2Measurement precision

If a new grid of nodes is generated for each time step in moving-boundary problems, then the accuracy of moving boundary representation is improved, but the computational complexity and time consumption increase

Engineering Contradiction:
Improvemoving boundary representation accuracyVSAvoidgrid generation complexity
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The patent performs preliminary action by establishing a fixed regular grid once at the beginning of the simulation. Instead of regenerating the grid at each time step, the method tracks material boundaries and updates particle types within the pre-established grid framework, significantly reducing computational complexity.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent applies dynamics by allowing the material boundaries and particle types to evolve dynamically within the static grid framework. As the simulation progresses, particles change types based on boundary movement and material transformations, enabling accurate representation of moving boundaries without grid regeneration.

Inventive Principle:
Principle #15Dynamics

3Measurement precision

If an irregular matrix is used to solve continuity equations on irregular grids, then the accuracy of boundary modeling is improved, but the difficulty of parallelization increases

Engineering Contradiction:
Improveboundary behavior modeling accuracyVSAvoidparallelization ease
Core Design Contradiction:
Measurement precisionVSEase of operation

Solution Approach 1:

The patent transforms the problem from irregular to regular by changing the grid structure parameter. This allows the use of structured matrices and standard numerical linear algebra techniques that are well-suited for parallel computation, while boundary accuracy is maintained through appropriate boundary condition implementation and grid spacing selection.

Inventive Principle:
Principle #35Parameter changes

Data Source

PatentEP3474313B1Atomic scale grid for modeling semiconductor structures and fabrication
Publication Date: 2023.03.01 SYNOPSYS INC
  • EP3474313B1 patent drawingFigure 1
  • EP3474313B1 patent drawingFigure 2
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AI summary

Roughly described, a system for simulating a temporal process in a body includes a meshing module to impose a grid of nodes on the body, the grid having a uni-form node spacing which is less than the quantum separa-tion distance in silicon. A system of node equations is provided, including at least one node equation for each of a plurality of nodes of the grid. The node equations describe behavior of at least one physical quantity at that node through each time step of the process. An iterati ng module iterates through the time steps to determi ne val ues for physical quantities of the body at the end of the simulation peri-od. Preferably one particle of the body is assigned to each node of the grid. For moving boundary processes, boundary movement can be represented simply by changing the particle type assigned to various nodes of the grid as the boundary advances.