Atomic Layer Etching with Dynamic Substrate Temperature Switching
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Solution Overview
Problem
Current atomic layer etching (ALE) technologies face challenges in efficiently processing semiconductor substrates due to limitations in temperature control, which affects the precision and efficiency of etching, particularly in forming and removing modified layers at optimal temperatures.
Innovation Solution
An ALE method and apparatus that utilize a combination of cooling fluids and laser beams to dynamically control the temperature of the substrate during the etching process, allowing for precise formation and removal of modified layers by alternating between low and high temperatures using source gases and a shower head, respectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the substrate temperature is maintained at a constant value during ALE process, then the process is simple to control, but the precision of modified layer formation and removal is reduced
Solution Approach 1:
The patent implements dynamic temperature control by switching between different temperature states (first temperature for modified layer formation, second temperature for modified layer removal) based on the process stage. The temperature control unit dynamically adjusts the substrate temperature according to the operational requirements of each ALE step, rather than maintaining a constant temperature throughout the entire process.
Solution Approach 2:
The patent changes the temperature parameter between different process stages. Specifically, the substrate temperature is set to a first temperature value during modified layer formation and changed to a second temperature value during modified layer removal. This parameter change enables optimization of each process step for maximum efficiency and precision.
2Manufacturing precision
If the substrate temperature is changed frequently during ALE process, then the precision of etching is improved, but the loss of time for temperature adjustment increases
Solution Approach 1:
The patent performs preliminary heating or cooling of the substrate before the modified layer removal step to ensure the substrate reaches the required second temperature in advance. The temperature control unit proactively adjusts the temperature during the modified layer formation step or in preparation for the removal step, minimizing idle time and ensuring the process can proceed without delay.
Solution Approach 2:
The patent maintains continuous useful action by overlapping temperature adjustment with other process steps. The temperature control operates continuously to maintain optimal temperatures for each stage, and the transition between temperature states is integrated into the process flow rather than being a separate, time-consuming operation. This ensures that temperature adjustments do not create idle time in the overall process.
3Productivity
If a single temperature is used for both modified layer formation and removal, then the energy consumption is reduced, but the productivity of ALE process decreases
Solution Approach 1:
The patent employs periodic action by alternating between different temperature states corresponding to different process steps. The substrate temperature is periodically adjusted to match the requirements of each ALE step (formation step requires first temperature, removal step requires second temperature), creating a rhythmic pattern of temperature changes that optimizes process efficiency while managing energy consumption through targeted heating/cooling cycles.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the ALE process to be performed at optimized temperatures, enhancing the precision and efficiency of etching, allowing for the removal of thicker film layers in fewer cycles and improving the reactivity of the etching process.
Implementation Method 1
cooling the substrate to a first temperature through a cooling fluid
Implementation Method 2
heating the substrate to a second temperature through a laser beam
Implementation Method 3
forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate
Implementation Method 4
removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate
Data Source
AI summary
Provided is an atomic layer etching (ALE) method including operation (a) of loading a substrate having a first surface and a second surface facing each other onto a chuck, operation (b) of cooling the substrate to a first temperature through a cooling fluid, operation (c) of forming a modified layer on the substrate through a reaction between a first source gas and the first surface of the substrate by spraying the first source gas toward the substrate from a shower head positioned above the chuck, operation (d) of heating the substrate to a second temperature through a laser beam, and operation (e) of removing the modified layer of the substrate through a reaction between a second source gas and the modified layer of the substrate by spraying the second source gas from the shower head toward the first surface of the substrate.