Atomic Layer Deposition Using Hydrogen Surface Pre-Treatment
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Solution Overview
Problem
The manufacturing process of high-performance semiconductor devices is approaching physical limits, and existing atomic layer deposition methods face challenges in achieving reliable film formation due to the need for precise control of precursor and reactor separation, evacuation, and purging processes.
Innovation Solution
A method involving multiple deposition cycles, including adsorption of a hydrogen-containing compound on a wafer surface, treatment with hydrogen gas, and reaction with a metal or silicon precursor to form a metal-containing or silicon-containing film, utilizing a semiconductor device manufacturing apparatus with precise control of process parameters and gas supply.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If atomic layer deposition is used to form one atomic layer in one cycle, then manufacturing precision is improved, but device complexity increases due to sequential precursor and reactor pulses requiring evacuation and purging
Solution Approach 1:
The wafer surface is pre-treated with hydrogen-containing compounds and hydrogen gas before precursor introduction, preparing the surface in advance to enhance reaction efficiency and reduce the need for complex evacuation and purging cycles
Solution Approach 2:
The process introduces parameter changes by using hydrogen gas treatment and hydrogen-containing compound adsorption as intermediate steps, modifying the surface state to improve deposition precision while simplifying the overall process control
2Manufacturing precision
If sequential pulses of precursor and reactor are used without simultaneous presence, then manufacturing precision is improved, but loss of time increases due to required evacuation and purging processes
Solution Approach 1:
The process maintains continuity by performing hydrogen-containing compound adsorption and hydrogen gas treatment in sequence without complete evacuation between steps, keeping the chamber in a usable state throughout the deposition cycle
Solution Approach 2:
Hydrogen-containing compounds are adsorbed onto the wafer surface in advance before precursor introduction, and hydrogen gas treatment is performed preliminarily to activate the surface, reducing the time needed for subsequent deposition steps
3Reliability
If hydrogen-containing compound adsorption and hydrogen gas treatment are performed before precursor supply, then reliability of film deposition is improved, but device complexity increases
Solution Approach 1:
The wafer surface is pre-prepared by adsorbing hydrogen-containing compounds and treating with hydrogen gas before precursor introduction, ensuring reliable film formation by activating the surface in advance
Solution Approach 2:
Hydrogen-containing compounds and hydrogen gas act as intermediary substances that mediate between the wafer surface and the metal precursor, facilitating reliable film deposition through surface activation and reaction enhancement
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the reliability and uniformity of film deposition, improving the density and reactivity of thin films formed on semiconductor wafers, thereby supporting the production of high-performance semiconductor devices.
Implementation Method 1
adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber
Implementation Method 2
treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas
Implementation Method 3
providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film
Data Source
AI summary
A method of depositing an atomic layer of a metal-containing film including a plurality of deposition cycles is provided. Each of the plurality of deposition cycles may include adsorbing a hydrogen (H)-containing compound on a wafer surface in a chamber, treating a wafer on which the H-containing compound is adsorbed with hydrogen (H2) gas, and providing a metal precursor to the wafer to react with the H-containing compound to form the metal-containing film.