Atomic Layer Nanoribbon Synthesis via Selective Oxidation

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current methods lack efficient synthesis and fabrication approaches for atomically-thin transition metal dichalcogenides (TMD) ribbons and nanoribbons, which are crucial for harnessing their unique physical and chemical properties.

Innovation Solution

A method involving chemical vapor deposition (CVD) to form double atomic layer ribbons by depositing monolayers of TMD materials on a substrate, followed by removing a portion to create atomic layer nanoribbons, utilizing precursor powders like molybdenum dioxide and sulfur to produce molybdenum disulfide, and employing UV-ozone treatment and etching to achieve the desired ribbon structures.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional synthesis methods are used for TMD ribbons, then the synthesis process is simple, but the manufacturing precision and control over ribbon dimensions are insufficient

Engineering Contradiction:
Improvecontrol over ribbon dimensionsVSAvoidsynthesis process complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The synthesis process is divided into distinct stages: initial TMD layer formation, ribbon pattern definition through masking, and selective removal of non-ribbon areas. This segmentation allows precise control over ribbon dimensions while maintaining a manageable overall process complexity

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The complete TMD layer is formed first before any ribbon patterning occurs. This preliminary formation of the full layer provides a foundation that can be precisely patterned later, enabling better dimensional control without complicating the initial synthesis

Inventive Principle:
Principle #10Preliminary action

2Object-generated harmful factors

If atomic layer ribbons are synthesized, then the edge effects are enhanced, but the synthesis and fabrication approach is lacking

Engineering Contradiction:
Improveedge effectsVSAvoidsynthesis and fabrication approach
Core Design Contradiction:
Object-generated harmful factorsVSEase of manufacture

Solution Approach 1:

The desired ribbon structures are extracted from a complete TMD layer by selectively removing material in non-ribbon areas. This extraction approach enhances edge effects by creating well-defined ribbon boundaries while using a relatively simple fabrication process based on standard thin-film techniques

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

A mask layer is introduced as an intermediary element to define ribbon patterns during synthesis. This mask enables precise ribbon formation without requiring complex direct synthesis methods, simplifying the overall fabrication approach while maintaining ease of manufacture

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This method enables the production of high-length-to-width ratio TMD ribbons and nanoribbons with enhanced edge effects, overcoming previous synthesis challenges and achieving precise control over ribbon dimensions and compositions.

Implementation Method 1

forming a double atomic layer ribbon comprising a first monolayer and a second monolayer positioned on a surface of the first monolayer

Methodology Applied
Scientific EffectChemical vapor deposition: Chemical Vapour Deposition

Implementation Method 2

employing UV-ozone treatment and etching to achieve the desired ribbon structures

Methodology Applied
Scientific EffectPhoto-oxidation: Photo-oxidation

Data Source

PatentUS12060642B2Method for growth of atomic layer ribbons and nanoribbons of transition metal dichalcogenides
Publication Date: 2024.08.13 HONDA MOTOR CO LTD
  • US12060642B2 patent drawing
  • US12060642B2 patent drawing
  • US12060642B2 patent drawing

AI summary

A method of making an atomic layer nanoribbon that includes forming a double atomic layer ribbon having a first monolayer and a second monolayer on a surface of the first monolayer, wherein the first monolayer and the second monolayer each contains a transition metal dichalcogenide material, oxidizing at least a portion of the first monolayer to provide an oxidized portion, and removing the oxidized portion to provide an atomic layer nanoribbon of the transition metal dichalcogenide material. Also provided are double atomic layer ribbons, double atomic layer nanoribbons, and single atomic layer nanoribbons prepared according to the method.