Atomic-Layer Semiconductor Etching for Precision and Throughput
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Solution Overview
Problem
Current etching methods for semiconductor processing face challenges in achieving high precision and selectivity, particularly in forming nanowires or nanosheets, due to varying selectivity ratios of different materials, which are difficult to satisfy the increasing demands of smart electronic devices.
Innovation Solution
The method involves forming a modified layer of one or several atom layers on a semiconductor material surface using a modifier, followed by controlled removal of this layer, with optional cleaning steps using specific agents, to achieve precise control over etching thickness and improve etching rate, allowing for isotropic reactions and self-limited processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional etching methods are used to achieve high etching precision, then the etching precision requirement can be met, but the processing efficiency and productivity are significantly reduced
Solution Approach 1:
The etching process is divided into multiple cycles, where each cycle includes forming a modified layer and removing it. This segmentation allows precise control of etching thickness in each cycle while maintaining high productivity through repeated efficient cycles.
Solution Approach 2:
The etching process employs periodic action through cyclic repetition of modified layer formation and removal. Each cycle etches a controlled thickness, and multiple cycles achieve the total required etching depth with high precision and efficiency.
2Adaptability or versatility
If different selectivity ratios are used for etching different materials, then material selectivity is improved, but the complexity of process control increases due to substantial differences between selectivity ratios
Solution Approach 1:
A modified layer is introduced as an intermediary between the etching agent and the semiconductor material. This modified layer has different etching rates for different materials, providing material selectivity while simplifying process control since the modified layer formation and removal can be uniformly controlled.
3Reliability
If the etching process is made more selective to preserve remaining semiconductor material, then the integrity of unetched regions is improved, but the etching rate and productivity are reduced
Solution Approach 1:
A modified layer is formed preliminarily on the semiconductor material surface before the actual etching step. This modified layer serves as a protective barrier that preserves the integrity of the material during etching while allowing controlled removal to achieve the desired etching rate and productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control of etching thickness to 0.5 nm or less, improving etching precision and rate, while preventing further reactions and ensuring processing quality by cyclically forming and removing the modified layer.
Implementation Method 1
forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier
Implementation Method 2
the reaction is self-limited
Data Source
AI summary
An embodiment of the present disclosure provides an etching method, having the following steps: forming a modified layer having a thickness of one or several atom layers on a selected region of a surface of a semiconductor material layer by using a modifier; and removing the modified layer. When a semiconductor is processed, this method achieves precise control over the etching thickness and improves the etching rate at the same time.